Temperature-dependent barrier characteristics of inhomogeneous In/p-Si (100) Schottky barrier diodes

Chinese Physics Letters

Volumn 21, Issue 9, 2004, Pages 1795-1798

  Tugluoglu, N ^a   Karadeniz, S ^a   Acar, S ^b   Kasap, M ^b  

^a Ankara Nuclear Research and Training Center   (Turkey)

^b GAZI UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

GAUSSIAN DISTRIBUTION; INDIUM COMPOUNDS; SEMICONDUCTOR DIODES; SILICON COMPOUNDS;

BARRIER HEIGHT INHOMOGENEITY; BARRIER HEIGHTS; CURRENT-VOLTAGE; IDEALITY FACTORS; METAL SEMICONDUCTOR INTERFACE; SI(1 0 0); TEMPERATURE DEPENDENT; TEMPERATURE RANGE; ZERO BIAS;

SCHOTTKY BARRIER DIODES;

EID: 4444230310     PISSN: 0256307X     EISSN: None     Source Type: Journal    
DOI: 10.1088/0256-307X/21/9/033     Document Type: Article

References (13)

1. Rhoderick E H and Williams R H 1988 Metal-Semiconductor Contacts (Oxford: Clarendon)
2. Song Y P, Van Meirhaeghe R L, Laflere W F and Cardon F 1986 Solid-State Electron. 29 633
3. Werner J H and Güttler H H 1991 J. Appl. Phys. 69 1522
4. Chand S and Kumar J 1996 J. Appl. Phys. 80 288
5. Chand S and Kumar J 1996 Semicond. Sci. Technol. 11 1203
6. Zhu S Y, Van Meirhaeghe R L, Detavernier C, Cardon F, Ru G P, Qu X P and Li B.Z 2000 Solid-State Electron. 44 663
7. Acar S et al 2004 Appl. Surf. Sci. 233 373
8. Tung R T 1992 Phys. Rev. B 45 13509
9. Sullivan J P, Tung R T, Pinto M R and Graham W R 1991 J. Appl. Phys. 70 7403
10. Schmitsdorf R F, Kampen T U and Mönch W 1995 Surf. Sci. 324 249
11. Palm H, Arbes M and Schulz M 1993 Phys. Rev. Lett. 71 2224
12. Dobrocka E and Osvald J 1994 Appl. Phys. Lett. 65 575
13. Horváth Z J 1996 Solid-State Electron. 39 176