Fabrication and characterization of n-In 0.4Ga 0.6N/p-Si solar cell

Solar Energy Materials and Solar Cells

Volumn 102, Issue , 2012, Pages 208-211

  Tran, Binh Tinh ^a   Chang, Edward Yi ^a   Trinh, Hai Dang ^a   Lee, Ching Ting ^b   Sahoo, Kartika Chandra ^a   Lin, Kung Liang ^a   Huang, Man Chi ^a   Yu, Hung Wei ^a   Luong, Tien Tung ^a   Chung, Chen Chen ^a   Nguyen, Chi Lang ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

InGaN; ITO; MOCVD; Si; Solar cell

Indexed keywords

ELECTRO-OPTIC CHARACTERISTIC; EXTERNAL QUANTUM EFFICIENCY; FILL FACTOR; INGAN; ITO; ITO CONTACT; SI SUBSTRATES; TI/AL/NI/AU;

CONTACTS (FLUID MECHANICS); GALLIUM; GALLIUM ALLOYS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPEN CIRCUIT VOLTAGE; SILICON; SOLAR CELLS;

NANOSTRUCTURED MATERIALS;

EID: 84861094292     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2012.03.030     Document Type: Article

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