Growth of high-quality In0:4Ga0:6N film on Si substrate by metal organic chemical vapor deposition

Applied Physics Express

Volumn 4, Issue 11, 2011, Pages

  Tran, Binh Tinh ^a   Chang, Edward Yi ^a   Lin, Kung Liang ^a   Wong, Yuen Yee ^a   Sahoo, Kartika Chandra ^b   Lin, Hsiao Yu ^a   Huang, Man Chi ^a   Nguyen, Hong Quan ^a   Lee, Ching Ting ^c   Trinh, Hai Dang ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITIES; GAN LAYERS; HIGH QUALITY; SI SUBSTRATES; SI(111) SUBSTRATE;

FULL WIDTH AT HALF MAXIMUM; GALLIUM NITRIDE; INDUSTRIAL CHEMICALS; METALLIC FILMS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; PHASE SEPARATION;

GALLIUM ALLOYS;

EID: 81055137642     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.115501     Document Type: Article

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