-
1
-
-
4244203187
-
Absorption and emission of of hexagonal InN. evidence of narrow fundamental band gap
-
V. Yu. Davydov et al., "Absorption and Emission of of Hexagonal InN. Evidence of Narrow Fundamental Band Gap", Phys. Stat. Sol. B, 229, 3, 2002, pp. R1-R3.
-
(2002)
Phys. Stat. Sol. B
, vol.229
, Issue.3
-
-
Davydov, V.Yu.1
-
2
-
-
0142120866
-
Temperature dependence of the fundamental band gap of InN
-
J. Wu et al., "Temperature Dependence of the Fundamental Band Gap of InN", J. Appl. Phys., 94, 7, 2003, pp. 4457-4460.
-
(2003)
J. Appl. Phys.
, vol.94
, Issue.7
, pp. 4457-4460
-
-
Wu, J.1
-
3
-
-
79955992797
-
Optical bandgap energy of wurtzite InN
-
T. Matsuoka, H. Okamoto, M. Nakao, H. Harima, and E. Kurimoto, "Optical Bandgap Energy of Wurtzite InN", Appl. Phys. Lett., 81, 7, 2002, pp. 1246-8.
-
(2002)
Appl. Phys. Lett.
, vol.81
, Issue.7
, pp. 1246-1248
-
-
Matsuoka, T.1
Okamoto, H.2
Nakao, M.3
Harima, H.4
Kurimoto, E.5
-
4
-
-
0038711780
-
R-F molecular beam epitaxy growth and properties of InN and related alloys
-
Y. Nanishi, Y. Saito and T. Yamaguchi, "R-F Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys", Jpn. J. Appl. Phys., 42, 5A, 2003, pp. 2549-2559.
-
(2003)
Jpn. J. Appl. Phys.
, vol.42
, Issue.5 A
, pp. 2549-2559
-
-
Nanishi, Y.1
Saito, Y.2
Yamaguchi, T.3
-
6
-
-
0000327786
-
The rate of radiative recombination in nitride semiconductors and alloys
-
A. Dmitriev and A. Oruzheinikov, "The rate of radiative recombination in nitride semiconductors and alloys," J. Appl. Phys., 86, 6, 1999, 3241-3246.
-
(1999)
J. Appl. Phys.
, vol.86
, Issue.6
, pp. 3241-3246
-
-
Dmitriev, A.1
Oruzheinikov, A.2
-
7
-
-
21544437251
-
0.92N grown by metalorganic vapor phase epitaxy
-
0.92N Grown by Metalorganic Vapor Phase Epitaxy", Appl. Phys. Lett., 65, 5, 1994, pp. 593-594.
-
(1994)
Appl. Phys. Lett.
, vol.65
, Issue.5
, pp. 593-594
-
-
Tanaka, T.1
-
8
-
-
0030241015
-
Electrical transport in p-GaN, n-InN and n-InGaN
-
W. Geerts, J.D. Mackenzie, C.R. Abernathy, S.J. Pearton, and T. Schmiedel, "Electrical transport in p-GaN, n-InN and n-InGaN", Solid-State Electron., 39, 9, 1996, pp. 1289-1294.
-
(1996)
Solid-state Electron.
, vol.39
, Issue.9
, pp. 1289-1294
-
-
Geerts, W.1
Mackenzie, J.D.2
Abernathy, C.R.3
Pearton, S.J.4
Schmiedel, T.5
-
9
-
-
0035881115
-
Nonlinear macroscopic polarization in III-V nitride alloys
-
F. Bernardini, and V. Fiorentini, "Nonlinear Macroscopic Polarization in III-V Nitride Alloys", Phys. Rev. B, 64, 8, 2001, pp. 085207/1-7.
-
(2001)
Phys. Rev. B
, vol.64
, Issue.8
-
-
Bernardini, F.1
Fiorentini, V.2
-
10
-
-
0033242946
-
Spontaneous versus piezoelectric polarization in III-V nitrides: Conceptual aspects and practical consequences
-
V. Fiorentini F. Bernardini, "Spontaneous versus Piezoelectric Polarization in III-V Nitrides: Conceptual Aspects and Practical Consequences", Phys. Stat. Sol. B, 216, 1, 1999, pp. 391-398.
-
(1999)
Phys. Stat. Sol. B
, vol.216
, Issue.1
, pp. 391-398
-
-
Fiorentini, V.1
Bernardini, F.2
-
11
-
-
0001590229
-
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
-
O. Ambacher et al., "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures", J. Appl. Phys., 85, 6, 1999, pp. 3222-3233.
-
(1999)
J. Appl. Phys.
, vol.85
, Issue.6
, pp. 3222-3233
-
-
Ambacher, O.1
-
13
-
-
79956041003
-
1-xN alloys
-
1-xN Alloys", Appl. Phys. Lett., 80, 25, 2002, pp. 4741-4743.
-
(2002)
Appl. Phys. Lett.
, vol.80
, Issue.25
, pp. 4741-4743
-
-
Wu, J.1
-
14
-
-
0000076783
-
Minority carrier diffusion length and lifetime in GaN
-
Z.Z. Bandic, P.M. Bridger, E.C. Piquette and T.C. McGill, "Minority carrier diffusion length and lifetime in GaN", Appl. Phys. Lett., 72, 24, 1998, pp. 3166-3168.
-
(1998)
Appl. Phys. Lett.
, vol.72
, Issue.24
, pp. 3166-3168
-
-
Bandic, Z.Z.1
Bridger, P.M.2
Piquette, E.C.3
McGill, T.C.4
-
15
-
-
0000033319
-
0.98N active layer
-
0.98N Active Layer", Appl. Phys. Lett., 74, 4, 1999, pp. 558-560.
-
(1999)
Appl. Phys. Lett.
, vol.74
, Issue.4
, pp. 558-560
-
-
Narukawa, Y.1
Saijou, S.2
Kawakami, Y.3
Fujita, S.4
Mukai, T.5
Nakamura, S.6
-
16
-
-
0003426859
-
-
John Wiley & Sons, Inc., New York
-
M.E. Levinshtein, S.L. Rumyanstev and M.S. Shur, "Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe", John Wiley & Sons, Inc., New York, 2001.
-
(2001)
Properties of Advanced Semiconductor Materials: GaN, AlN, InN, BN, SiC, SiGe
-
-
Levinshtein, M.E.1
Rumyanstev, S.L.2
Shur, M.S.3
|