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Volumn , Issue , 2005, Pages 37-42

Characterization and analysis of InGaN photovoltaic devices

Author keywords

[No Author keywords available]

Indexed keywords

INTERNAL QUANTUM EFFICIENCY (IQE); MESA DEVICES; PHOTOVOLTAIC APPLICATIONS; QUANTUM-WELL SOLAR CELLS;

EID: 27944476343     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper
Times cited : (50)

References (16)
  • 1
    • 4244203187 scopus 로고    scopus 로고
    • Absorption and emission of of hexagonal InN. evidence of narrow fundamental band gap
    • V. Yu. Davydov et al., "Absorption and Emission of of Hexagonal InN. Evidence of Narrow Fundamental Band Gap", Phys. Stat. Sol. B, 229, 3, 2002, pp. R1-R3.
    • (2002) Phys. Stat. Sol. B , vol.229 , Issue.3
    • Davydov, V.Yu.1
  • 2
    • 0142120866 scopus 로고    scopus 로고
    • Temperature dependence of the fundamental band gap of InN
    • J. Wu et al., "Temperature Dependence of the Fundamental Band Gap of InN", J. Appl. Phys., 94, 7, 2003, pp. 4457-4460.
    • (2003) J. Appl. Phys. , vol.94 , Issue.7 , pp. 4457-4460
    • Wu, J.1
  • 4
    • 0038711780 scopus 로고    scopus 로고
    • R-F molecular beam epitaxy growth and properties of InN and related alloys
    • Y. Nanishi, Y. Saito and T. Yamaguchi, "R-F Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys", Jpn. J. Appl. Phys., 42, 5A, 2003, pp. 2549-2559.
    • (2003) Jpn. J. Appl. Phys. , vol.42 , Issue.5 A , pp. 2549-2559
    • Nanishi, Y.1    Saito, Y.2    Yamaguchi, T.3
  • 6
    • 0000327786 scopus 로고    scopus 로고
    • The rate of radiative recombination in nitride semiconductors and alloys
    • A. Dmitriev and A. Oruzheinikov, "The rate of radiative recombination in nitride semiconductors and alloys," J. Appl. Phys., 86, 6, 1999, 3241-3246.
    • (1999) J. Appl. Phys. , vol.86 , Issue.6 , pp. 3241-3246
    • Dmitriev, A.1    Oruzheinikov, A.2
  • 7
    • 21544437251 scopus 로고
    • 0.92N grown by metalorganic vapor phase epitaxy
    • 0.92N Grown by Metalorganic Vapor Phase Epitaxy", Appl. Phys. Lett., 65, 5, 1994, pp. 593-594.
    • (1994) Appl. Phys. Lett. , vol.65 , Issue.5 , pp. 593-594
    • Tanaka, T.1
  • 9
    • 0035881115 scopus 로고    scopus 로고
    • Nonlinear macroscopic polarization in III-V nitride alloys
    • F. Bernardini, and V. Fiorentini, "Nonlinear Macroscopic Polarization in III-V Nitride Alloys", Phys. Rev. B, 64, 8, 2001, pp. 085207/1-7.
    • (2001) Phys. Rev. B , vol.64 , Issue.8
    • Bernardini, F.1    Fiorentini, V.2
  • 10
    • 0033242946 scopus 로고    scopus 로고
    • Spontaneous versus piezoelectric polarization in III-V nitrides: Conceptual aspects and practical consequences
    • V. Fiorentini F. Bernardini, "Spontaneous versus Piezoelectric Polarization in III-V Nitrides: Conceptual Aspects and Practical Consequences", Phys. Stat. Sol. B, 216, 1, 1999, pp. 391-398.
    • (1999) Phys. Stat. Sol. B , vol.216 , Issue.1 , pp. 391-398
    • Fiorentini, V.1    Bernardini, F.2
  • 11
    • 0001590229 scopus 로고    scopus 로고
    • Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
    • O. Ambacher et al., "Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures", J. Appl. Phys., 85, 6, 1999, pp. 3222-3233.
    • (1999) J. Appl. Phys. , vol.85 , Issue.6 , pp. 3222-3233
    • Ambacher, O.1
  • 13
    • 79956041003 scopus 로고    scopus 로고
    • 1-xN alloys
    • 1-xN Alloys", Appl. Phys. Lett., 80, 25, 2002, pp. 4741-4743.
    • (2002) Appl. Phys. Lett. , vol.80 , Issue.25 , pp. 4741-4743
    • Wu, J.1
  • 14
    • 0000076783 scopus 로고    scopus 로고
    • Minority carrier diffusion length and lifetime in GaN
    • Z.Z. Bandic, P.M. Bridger, E.C. Piquette and T.C. McGill, "Minority carrier diffusion length and lifetime in GaN", Appl. Phys. Lett., 72, 24, 1998, pp. 3166-3168.
    • (1998) Appl. Phys. Lett. , vol.72 , Issue.24 , pp. 3166-3168
    • Bandic, Z.Z.1    Bridger, P.M.2    Piquette, E.C.3    McGill, T.C.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.