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Volumn 8325, Issue , 2012, Pages

Contrast improvement with balanced diffusion control of PAG and PDB

Author keywords

[No Author keywords available]

Indexed keywords

AFTER-DEVELOPMENT INSPECTIONS; DIFFUSION CONTROL; DIFFUSION LENGTH; IMMERSION LITHOGRAPHY; MATCHING CONTROL; MINIMUM FEATURE SIZES; OPTICAL CONTRAST; PATTERN FIDELITY; PROCESS DEVELOPMENT; RESOLUTION ENHANCEMENT TECHNIQUE; RESOLUTION LIMITS; SCATTERING BARS; SEMICONDUCTOR MANUFACTURING;

EID: 84861059261     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.915802     Document Type: Conference Paper
Times cited : (15)

References (13)
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  • 2
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    • Electron beam nanolithography and testing: Ways of increasing the resolution and the throughput
    • Vladimir A. Zlobin "Electron beam nanolithography and testing: ways of increasing the resolution and the throughput, " Proc. of SPIE vol. 6995, 69950D, (2008).
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    • Zlobin, V.A.1
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    • 65849353541 scopus 로고    scopus 로고
    • Development of materials and processes for negative tone development toward 32-nm node 193-nm immersion double-patterning process
    • Tarutani, S., Hideaki, T., and Kamimura, S., "Development of materials and processes for negative tone development toward 32-nm node 193-nm immersion double-patterning process, " Proc. SPIE 7273, 727301C - 727308C (2009).
    • (2009) Proc. SPIE , vol.7273
    • Tarutani, S.1    Hideaki, T.2    Kamimura, S.3
  • 6
    • 0038158890 scopus 로고    scopus 로고
    • Layout impact of resolution enhancement techniques: Impediment or opportunity?
    • Apr.
    • L. W. Liebmann, "Layout impact of resolution enhancement techniques: impediment or opportunity ?" in Proc. Int. Symp. on Physical Design, Apr, pp. 110-117. (2003).
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    • Liebmann, L.W.1
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    • Integration of EUV lithography in the fabrication of 22-nm node devices
    • Feb.
    • O. Wood, C.-S. Koay, K. Petrillo, H. Mizuno, and S. Raghunathan, "Integration of EUV lithography in the fabrication of 22-nm node devices, " in Proc. of SPIE, vol. 7271, Feb (2009).
    • (2009) Proc. of SPIE , vol.7271
    • Wood, O.1    Koay, C.-S.2    Petrillo, K.3    Mizuno, H.4    Raghunathan, S.5
  • 8
    • 77955607726 scopus 로고    scopus 로고
    • Double patterning lithography: The bridge between low k1 ArF and EUV
    • Feb.
    • M. Dusa, J. Finders, and S. Hsu, "Double patterning lithography: The bridge between low k1 ArF and EUV, " in mic, Feb ( 2008).
    • (2008) Mic
    • Dusa, M.1    Finders, J.2    Hsu, S.3
  • 10
    • 27944510181 scopus 로고    scopus 로고
    • RADAR: RET-aware detailed routing using fast lithography simulations
    • 23.4, Proceedings 2005, 42nd Design Automation Conference, DAC 2005
    • J. Mitra, P. Yu, and D. Z. Pan, "RADAR: RET-Aware Detailed Routing Using Fast Lithography Simulations, " in Proc. Design Automation Conf., Jun 2005, pp. 369 - 372. (Pubitemid 41675464)
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    • Mitra, J.1    Yu, P.2    Pan, D.Z.3
  • 11
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    • Modelassisted routing for Improved lithography robustness
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  • 12
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    • Identifying materials limits of chemically amplified photoresists
    • Wen-li Wu, Vivek M. Prabhu, and Eric K. Lin. " Identifying materials limits of chemically amplified photoresists, " Proc. of SPIE Vol. 6519, 651902, (2007).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.