Co-occurrence of threshold switching and memory switching in Pt/NbO x/Pt cells for crosspoint memory applications

IEEE Electron Device Letters

Volumn 33, Issue 2, 2012, Pages 236-238

  Liu, Xinjun ^a   Md Sadaf, Sharif ^a   Son, Myungwoo ^a   Park, Jubong ^a   Shin, Jungho ^a   Lee, Wootae ^a   Seo, Kyungah ^a   Lee, Daeseok ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Crosspoint memory; niobium oxide; nonvolatile memory; resistive switching (RS); threshold switching (TS)

Indexed keywords

BI-LAYER; CO-OCCURRENCE; CROSSPOINT MEMORY; DEVICE CHARACTERISTICS; MEMORY APPLICATIONS; MEMORY ARRAY; MEMORY SWITCHING; NON-VOLATILE MEMORIES; RESISTIVE SWITCHING; THRESHOLD SWITCHING;

NIOBIUM; NIOBIUM OXIDE; PLATINUM; SWITCHING SYSTEMS;

SWITCHING;

EID: 84856295388     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2174452     Document Type: Article

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