A new transient model for recovery and relaxation oscillations in phase-change memories

IEEE Transactions on Electron Devices

Volumn 57, Issue 8, 2010, Pages 1838-1845

  Lavizzari, Simone ^a   Ielmini, Daniele ^b   Lacaita, Andrea L ^b  

^a Numonyx   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

Amorphous semiconductors; chalcogenide materials; nonvolatile memory; oscillations; phase change memory (PCM); recovery

Indexed keywords

BIAS CONDITIONS; CHALCOGENIDE MATERIALS; DELAY TIME; ELECTRONIC SWITCHING; IN-PHASE; NON-VOLATILE MEMORIES; NUMERICAL MODELS; OSCILLATION BEHAVIOR; OSCILLATIONS; PHASE-CHANGE MEMORY (PCM); READOUT PROCESS; RECOVERY EFFECTS; RECOVERY PROCESS; RECOVERY TIME; RELAXATION OSCILLATION; SWITCHING TIME; THRESHOLD SWITCHING; TRANSIENT EFFECT; TRANSIENT MODEL; TRANSIENT MODELING;

AMORPHOUS SEMICONDUCTORS; COMPUTER SIMULATION; CONDUCTIVE MATERIALS; PHASE TRANSITIONS; RECOVERY; STRUCTURED PROGRAMMING; SWITCHING;

PHASE CHANGE MEMORY;

EID: 77955171691     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2050963     Document Type: Article

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