Radiation detectors based on 4H semi-insulating silicon carbide

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7805, Issue , 2010, Pages

  Mandal, Krishna C ^a   Krishna, Ramesh ^a   Muzykov, Peter G ^a   Laney, Zegilor ^a   Das, Sandip ^a   Sudarshan, Tangali S ^a  

^a The Department of Mechanical Engineering   (United States)

Author keywords

High Bandgap; Low Leakage Current; Radiation Detectors; Semi Insulating; Semiconductors; Silicon Carbide

Indexed keywords

CHEMICAL ETCHING; CROSS-POLARIZED; ELECTRON-BEAM-INDUCED CURRENT; HIGH BANDGAP; HIGH QUALITY; LOW-LEAKAGE CURRENT; SEMI-INSULATING; SEMICONDUCTORS; THERMALLY STIMULATED CURRENT;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRON BEAMS; ENERGY GAP; ETCHING; GAMMA RAYS; LEAKAGE CURRENTS; NEUTRON DETECTORS; RAMAN SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SILICON DETECTORS; SILICON WAFERS; X RAY DIFFRACTION; X RAYS;

RADIATION DETECTORS;

EID: 78049353645     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.863572     Document Type: Conference Paper

References (5)

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