New set/reset scheme for excellent uniformity in bipolar resistive memory

IEEE Electron Device Letters

Volumn 32, Issue 3, 2011, Pages 228-230

  Park, Jubong ^a   Jo, Minseok ^a   Jung, Seungjae ^a   Lee, Joonmyoung ^a   Lee, Wootae ^a   Kim, Seonghyun ^a   Park, Sangsu ^a   Shin, Jungho ^a   Hwang, Hyunsang ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

Pulse magnitude modification; resistive random access memory (RRAM); uniformity

Indexed keywords

CONDUCTING FILAMENT; FIXED VOLTAGE; HIGH-RESISTANCE STATE; LOW-RESISTANCE STATE; MULTI-BITS; NORMAL OPERATIONS; OPERATION SCHEMES; PULSE MAGNITUDES; RESISTIVE RANDOM-ACCESS MEMORY (RRAM); UNIFORMITY;

RANDOM ACCESS STORAGE;

EID: 79951944843     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2094599     Document Type: Article

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