Self-heating effects in GaN/AlGaN heterostructure field-effect transistors and device structure optimization

2003 Nanotechnology Conference and Trade Show - Nanotech 2003

Volumn 3, Issue , 2003, Pages 333-336

  Filippov, Konstantin A ^a   Balandin, Alexander A ^a  

^a University of California Riverside   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; DENSITY (SPECIFIC GRAVITY); EQUATIONS OF MOTION; FIELD EFFECT TRANSISTORS; HEATING; HETEROJUNCTIONS; MATHEMATICAL MODELS; OPTIMIZATION; SEMICONDUCTOR DOPING; THERMAL CONDUCTIVITY;

DEFECT DENSITIES; DEVICE STRUCTURES; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS (HFET); SELF-HEATING EFFECTS;

GALLIUM NITRIDE;

EID: 6344237421     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

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