Effect of SrTiO3 buffer layers on crystallization and properties of sol-gel derived Pb(Zr0.52Ti0.48)O3 thin films

Ferroelectrics

Volumn 406, Issue 1, 2010, Pages 206-212

  Xin, Hong ^a,b   Ren, Wei ^a   Wu, Xiaoqing ^a   Shi, Peng ^a   Zhu, Wanlin ^a   Zhang, Xiaohua ^a  

^a XI'AN JIAOTONG UNIVERSITY   (China)

^b XI'AN UNIVERSITY OF ARCHITECTURE AND TECHNOLOGY   (China)

Author keywords

Buffer layers; Crystallization; Electrical properties; Preferential orientation; PZT; Thin films

Indexed keywords

CRITICAL THICKNESS; CRYSTALLIZATION MECHANISMS; ELECTRICAL PROPERTIES; ELECTRICAL PROPERTY; PREFERENTIAL ORIENTATION; PZT; PZT THIN FILM; SOL-GEL METHODS; SRTIO;

BUFFER LAYERS; CRYSTALLIZATION; EPITAXIAL LAYERS; FERROELECTRIC MATERIALS; FERROELECTRICITY; GELS; LEAD; OPTICAL WAVEGUIDES; SOL-GEL PROCESS; SOL-GELS; SOLS; STRONTIUM ALLOYS; X RAY DIFFRACTION; ZIRCONIUM;

ELECTRIC PROPERTIES;

EID: 79955695576     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150193.2010.484664     Document Type: Conference Paper

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