Electrical properties of metal-ferroelectric PbZr0.53Ti0.47O3-polysilicon- insulator Y2O3-silicon capacitors and field-effect transistors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 3, 2009, Pages 1026-1029

  Chan, Po Chin ^a   Shih, Wen Chieh ^a   Chang, Ingram Yin Ku ^a   Lee, Joseph Ya Min ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOLARIZATION FIELDS; ELECTRICAL PROPERTIES; FERROELECTRIC LAYERS; GATE LEAKAGE CURRENT DENSITIES; MEMORY WINDOWS; PBZR0.53TI0.47O3; POLYSILICON FLOATING GATES; PZT; SILICON CAPACITORS; SUB THRESHOLD SLOPES; VOLTAGE RANGES;

CAPACITANCE; CAPACITORS; ELECTRON MULTIPLIERS; FERROELECTRICITY; OZONE WATER TREATMENT; PIEZOELECTRIC TRANSDUCERS; POLYSILICON; WINDOWS;

FIELD EFFECT TRANSISTORS;

EID: 65249123557     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3112651     Document Type: Article

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