High quality silicon-based AIN thin films for MEMS application

Integrated Ferroelectrics

Volumn 69, Issue , 2005, Pages 367-374

  Yu, Yi ^a   Ren, Tian Ling ^a   Liu, Li Tian ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

(002) orientation; Aluminum nitride; Reactive sputtering; Thin film bulk acoustic resonator (TFBAR)

Indexed keywords

ACOUSTIC BULK WAVE DEVICES; AUGER ELECTRON SPECTROSCOPY; MICROELECTROMECHANICAL DEVICES; PIEZOELECTRIC MATERIALS; SPUTTERING;

(002) ORIENTATION; REACTIVE SPUTTERING; THIN FILM BULK ACOUSTIC RESONATOR (TFBAR);

ALUMINUM NITRIDE;

EID: 33644757717     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580590899405     Document Type: Conference Paper

References (4)

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2. H. M. Liaw and W. Cronin, "The SAW characteristics of sputtered aluminum nitride on silicon," 1993 Ultrasonics Symposium Proceedings 267-271.
3. R. S. Naik, "Sputter deposition of aluminum nitride for applications in thin-film resonators," Master Thesis (MIT: 1996).
4. H. P. Löbl, M. Klee, R. Milsom, et al., "Materials for bulk acoustic wave (BAW) resonators and filters," Journal of the European Ceramic Society 21, 2633-2640 (2001).