Performance analysis of rear point contact solar cells by three-dimensional numerical simulation

IEEE Transactions on Electron Devices

Volumn 59, Issue 5, 2012, Pages 1311-1319

  Zanuccoli, Mauro ^a   De Rose, Raffaele ^a,b   Magnone, Paolo ^a   Sangiorgi, Enrico ^a   Fiegna, Claudio ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSITY OF CALABRIA   (Italy)

Author keywords

3 D numerical simulation; Passivated emitter and rear cell (PERC); passivated emitter rear locally diffused (PERL); rear point contact; solar cell

Indexed keywords

3-D NUMERICAL SIMULATION; LOSS MECHANISMS; NUMERICAL DEVICE SIMULATION; PASSIVATED EMITTER AND REAR CELL (PERC); PASSIVATED EMITTER REAR LOCALLY DIFFUSED (PERL); PERFORMANCE ANALYSIS; REAR SIDE; RECOMBINATION LOSS; SERIES RESISTANCES; STATE-OF-THE-ART DEVICES; SUBSTRATE RESISTIVITY; TECHNOLOGICAL PARAMETERS; THREE-DIMENSIONAL NUMERICAL SIMULATIONS; TRANSPORT EQUATION;

CONVERSION EFFICIENCY; ELECTRIC RESISTANCE; PASSIVATION; SOLAR CELLS; THREE DIMENSIONAL; THREE DIMENSIONAL COMPUTER GRAPHICS;

POINT CONTACTS;

EID: 84860261468     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2187297     Document Type: Article

References (43)

1. International Technology Roadmap for Photovoltaic (ITRPV.net), 2010.
2. [Online]. Available: http://www.itrpv.net
3. M. A. Green, K. Emery, Y. Hishikawa, and W. Warta (2009, Jan.). Solar cell efficiency tables (version 33). Prog. Photovolt, Res. Appl. [Online]. 17(1), pp. 85-94. Available: http://www.interscience.wiley.com
4. P. Magnone, R. De Rose, M. Zanuccoli, D. Tonini, M. Galiazzo, G. Cellere, H.-W. Guo, M. Frei, E. Sangiorgi, and C. Fiegna, "Understanding the impact of double screen-printing on silicon solar cells by 2-D numerical simulations," in Proc. 37th IEEE PVSC, 2011, pp. 1-4.
5. R. DeRose, M. Zanuccoli, P. Magnone, D. Tonini, M. Galiazzo, G. Cellere, M. Frei, H.-W. Guo, C. Fiegna, and E. Sangiorgi, "2-D numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance," in Proc. 37th IEEE PVSC, 2011, pp. 1-4.
6. A. G. Aberle, Crystalline Silicon Solar Cell: Advanced Surface Passivation and Analysis. Sydney, Australia: Univ. New South Wales, 1999.
7. M. A. Green, Silicon Solar Cells, Advanced Principles & Practice. Sydney, Australia: UNSW Photovolt., 1995.
8. M. A. Green, Solar Cells: Operating Principles Technology (The Red Book). Sydney, Australia: UNSW Photovolt., 1986.
9. J. Zaho, A. Wang, P. P. Altermatt, S. R. Wenham, and M. A. Green, "24% efficient perl silicon solar cells: Recent improvements in high efficiency silicon cell research," Solar Energy Mater. Solar Cells, vol. 41/42, pp. 87-99, 1996. (Pubitemid 126357062)
10. S. W. Glunz, "High-efficiency crystalline silicon solar cells," Adv. Opto-Electon., vol. 2007, p. 97370, 2007.
11. C. Mader, J. Müller, S. Gatz, T. Dullweber, and R. Brendel, "Rear-side point-contacts by inline thermal evaporation of aluminum," in Proc. 35th IEEE PVSC, 2010, pp. 001446-001449.
12. A. Ristow, A. Ebong, M. Hilali, and A. Rohatgi, "Screen-printed back surface reflector for light trapping in crystalline silicon solar cells," in Proc. 17th Eur. Photovolt. Solar Energy Conf. Exhib., Munich, Germany, Oct. 22-26, 2001, pp. 1335-1338.
13. T. Dullweber, S. Gatz, H. Hannebauer, T. Falcon, R. Hesse, J. Schmidt, and R. Brendel, "Towards 20% efficient large-area screen-printed rearpassivated silicon solar cells," Progr. Photovolt., Res. Appl., doi: 10.1002/pip.1198.
14. J.-H. Lai, A. Upadhyaya, R. Ramanathan, A. Das, K. Tate, V. Upadhyaya, A. Kapoor, C.-W. Chen, and A. Rohatgi, "Large area 19.4% efficient rear passivated silicon solar cells with local Al BSF and screen-printed contacts," in Proc. 37th IEEE Photovolt. Spec. Conf., Seattle, WA, 2011.
15. M. Tucci, E. Talgorn, L. Serenelli, E. Salza, M. Izzi, and P. Mangiapane, "Laser fired back contact for silicon solar cells," Thin Solid Films, vol. 516, no. 20, pp. 6767-6770, Aug. 2008.
16. D. Reinwand, J. Specht, D. Stuwe, S. Seitz, J. Nekarda, D. Biro, R. Preu, and R. Trassl, "21.1% efficient PERC silicon solar cells on large scale by using inline sputtering for metallization," in Proc. 35th IEEE PVSC, 2010, pp. 003582-003586.
17. P. Ortega, A. Orpella, I. Martín, M. Colina, G. López, C. Voz, M. I. Sánchez, C. Molpeceres, and R. Alcubilla, "Laser-fired contact optimization in c-Si solar cells," Progr. Photovolt., Res. Appl., doi: 10.1002/pip.1115.
18. P. Ortega, G. Lopez, A. Orpella, I. Martin, M. Colina, C. Voz, S. Bermejo, J. Puigdollers, M. Garcia, and R. Alcubilla, "Crystalline silicon solar cells beyond 20% efficiency," in Proc. CDE, Palma de Mallorca, Spain, 2011, pp. 1-4. ISBN: 978-1-4244-7863-7.
19. M. Kerr, J. Schmidt, and A. Cuevas, "Comparison of the open circuit voltage of simplified PERC cells passivated with PECVD silicon nitride and thermal silicon oxide," Progr. Photovolt., Res. Appl., vol. 8, no. 5, pp. 529-536, Sep./Oct. 2000. (Pubitemid 32018628)
20. S. Dauwe, L. Mittelsta, A. Metz, and R. Hezel, "Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells," in Progr. Photovolt., Res. Appl., Jun. 2002, vol. 10, no. 4, pp. 271-278. (Pubitemid 34515871)
21. W. Brendle, V. X. Nguyen, A. Grohe, E. Schneiderlöchner, U. Rau, G. Palfinger, and J. H. Werner, "20.5% efficient silicon solar cell with a low temperature rear side process using laser-fired contacts," Progr. Photovolt., Res. Appl., vol. 14, no. 7, pp. 653-662, Nov. 2006. (Pubitemid 44651909)
22. G. Heiser, P. P. Altermatt, A. Williams, A. Sproul, and M. A. Green, "Optimisation of rear contact geometry of high efficiency silicon solar cells using three dimensional numerical modelling," in Proc. 13th Eur. Photovolt. Solar Energy Conf., 1995, pp. 447-450.
23. J. Renshaw, M. H. Kang, V. Meemongkolkiat, A. Rohatgi, D. Carlson, and M. Bennett, "3D-modeling of a back point contact solar cell structure with a selective emitter," in Proc. 34th IEEE PVSC, 2009, pp. 000375-000379.
24. H. Plagwitz, M. Schaper, J. Schmidt, B. Tarheiden, and R. Brendel, "Analytical model for the optimization of locally contacted solar cells," in Proc. 31st IEEE Photovolt. Spec. Conf., 2005, pp. 999-1002. (Pubitemid 41667953)
25. P. Saint-Cast, M. Rudiger, A.Wolf, M. Hofmann, J. Rentsch, and R. Preu, "Advanced analytical model for the effective recombination velocity of locally contacted surfaces," J. Appl. Phys., vol. 108, no. 1, p. 013705, Jul. 2010.
26. D. Kray and S. Glunz, "Investigation of laser-fired rear-side recombination properties using an analytical model," Progr. Photovolt., Res. Appl., vol. 14, no. 3, pp. 195-201, May 2006.
27. A. G. Aberle, G. Heiser, and M. A. Green, "Two dimensional numerical optimization study of the rear contact geometry of high efficiency silicon solar cells," J. Appl. Phys., vol. 75, no. 10, pp. 5391-5405, May 1994.
28. S. W. Glunz, E. Schneiderlöchner, D. Kray, A. Grohe, M. Hermle, H. Kampwerth, R. Preu, and G.Willeke, "Laser-fired contact silicon solar cells on p-and n-substrates," in Proc. 19th Eur. Photovolt. Solar Energy Conf., 2004, pp. 408-411.
29. J. Dicker, J. O. Schumacher,W.Warta, and S.W. Glunz, "Analysis of onesun monocrystalline rear-contacted silicon solar cells with efficiencies of 22.1%," J. Appl. Phys., vol. 91, no. 7, pp. 4335-4343, 2002.
30. S. Sterk and S. W. Glunz, "Simulation in high efficiency solar cell research," Simul. Semicond. Devices Process., vol. 5, pp. 393-396, Sep. 1993.
31. K. Kotsovos and K. Misiakos, "Three-dimensional simulation of carrier transport effects in the base of rear point contact silicon solar cells," J. Appl. Phys., vol. 89, no. 4, pp. 2491-2496, Feb. 2001. (Pubitemid 33662035)
32. M. Zanuccoli, R. De Rose, P. Magnone, M. Frei, H.-W. Guo, M. Agrawal, E. Sangiorgi, and C. Fiegna, "Numerical simulation and modeling of rear point contact solar cells," in Proc. 37th IEEE PVSC, 2011, pp. 1-5.
33. Sentaurus Device User Guide, Synopsis, Mountain View, CA, 2009. Ver. C-2009.06.
34. R. DeRose, M. Zanuccoli, P. Magnone, E. Sangiorgi, and C. Fiegna, "Open issues for the numerical simulation of silicon solar cells," in Proc. 12th ULIS, 2011, pp. 1-4.
35. A. Schenk, "Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation," J. Appl. Phys., vol. 84, no. 7, pp. 3684-3695, Oct. 1998. (Pubitemid 128600505)
36. P. P. Altermatt, A. Schenk, F. Geelhaar, and G. Heiser, "Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing," J. Appl. Phys., vol. 93, no. 3, pp. 1598-1604, Feb. 2003.
37. D. B. M. Klaassen, "A unified mobility model for device simulation," Solid State Electron., vol. 35, no. 7, pp. 953-959, Jul. 1992.
38. J. G. Fossum, R. P. Mertens, D. S. Lee, and J. F. Nijs, "Carrier recombination and lifetime in highly doped silicon," Solid State Electron., vol. 26, no. 6, pp. 569-576, Jun. 1983.
39. S. W. Glunz, S. Rein, J. Y. Lee, and W. Warta, "Minority carrier lifetime degradation in boron-doped Czochralski silicon," J. Appl. Phys., vol. 90, no. 5, pp. 2397-2404, Sep. 2001. (Pubitemid 33600658)
40. A. Cuevas, M. J. Kerr, and J. Schmidt, "Passivation of crystalline silicon using silicon nitride," in Proc. 3rd World Conf. Photovolt. Energy Convers., 2003, pp. 913-918.
41. A. Wolf, E. A. Wotke, A. Walczak, S. Mack, B. Bitnar, C. Koch, R. Preu, and D. Biro, "Pilot line processing of 18.6% efficient rear surface passivated large area solar cells," in Proc. 35th IEEE PVSC, 2010, pp. 1014-1018.
42. A. Wolf, D. Biro, J. Nekarda, S. Stumpp, A. Kimmerle, S. Mack, and R. Preu, "Comprehensive analytical model for locally contacted rear surface passivated solar cells," J. Appl. Phys., vol. 108, no. 12, pp. 124510-1-124510-13, Dec. 2010.
43. R. H. Cox and H. Strack, "Ohmic contacts for GaAs devices," Solid State Electron., vol. 10, no. 12, pp. 1213-1214, Dec. 1967.