Excess noise characteristics of thin AlAsSb APDs

IEEE Transactions on Electron Devices

Volumn 59, Issue 5, 2012, Pages 1475-1479

  Xie, Jingjing ^a   Xie, Shiyu ^a   Tozer, R C ^a   Tan, Chee Hing ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

AlAsSb SAM avalanche photodiode (APD); excess noise

Indexed keywords

ALASSB SAM AVALANCHE PHOTODIODE (APD); AVALANCHE GAINS; CARRIER INJECTION; ELECTRON IONIZATION; EXCESS NOISE; INALAS; INP; IONIZATION COEFFICIENT; LOWER NOISE; MIXED CARRIER;

IONIZATION;

AVALANCHE PHOTODIODES;

EID: 84860252247     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2187211     Document Type: Article

References (29)

1. K. S. Hyun, Y.-H. Kwon, and I. Yun, "Characteristics of a planar InP/InGaAs avalanche photodiode with a thin multiplication layer," J. Korean Phys. Soc., vol. 44, no. 4, pp. L779-L784, Apr. 2004. (Pubitemid 38613844)
2. S. Hwang, J. Shim, and K. Yoo, "A 10-Gb/s planar InGaAs/InP avalanche photodiode with a thin multiplication layer fabricated by using recessetching and single-diffusion processes," J. Korean Phys. Soc., vol. 49, no. 1, pp. 253-260, Jul. 2006. (Pubitemid 44212538)
3. Y. L. Goh, A. R. J. M. D. J. Massey, J. S. Ng, C. H. Tan, M. Hopkinson, J. P. R. David, S. K. Jones, C. C. Button, and S. M. Pinches, "Excess avalanche noise in In0.52Al0.48As," IEEE J. Quantum Electron., vol. 43, no. 6, pp. 503-507, Jun. 2007.
4. T. Nakata, T. Takeuchi, I.Watanabe, K. Makila, and T. Torikai, "10 Gbit/s high sensitivity, low-voltage-operation avalanche photodiodes with thin InAlAs multiplication layer and waveguide structure," Electron. Lett., vol. 36, no. 24, pp. 2033-2034, Nov. 2000. (Pubitemid 32073253)
5. T. Nakata, T. Takeuchi, K.Makita, Y. Amamiya, Y. Suzuki, and T. Torikai, "An ultra high speed waveguide avalanche photodiode for 40-Gb/s optical receiver," in Proc. 27th Eur. Conf. Opt. Commun., 2001, pp. 564-565. (Pubitemid 34699519)
6. M. Lahrichi, G. Glastre, E. Derouin, D. Carpentier, N. Lagay, J. Decobert, and M. Achouche, "240-GHz gain-bandwidth product backside illuminated AlInAs avalanche photodiodes," IEEE Photon. Technol. Lett., vol. 22, no. 18, pp. 1373-1375, Sep. 2010.
7. B. K. Ng, J. P. R. David, R. C. Tozer, M. Hopkinson, G. Hill, and G. J. Rees, "Excess noise characteristics of Al0.8Ga0.2As," IEEE Photon. Technol. Lett., vol. 14, no. 4, pp. 522-524, Apr. 2002.
8. R. J. McIntyre, "Multiplication noise in uniform avalanche diodes," IEEE Trans. Electron Devices, vol. ED-13, no. 1, pp. 164-168, Jan. 1966.
9. L. J. J. Tan, J. S. Ng, C. H. Tan, and J. P. R. David, "Avalanche noise characteristics in submicron InP diodes," IEEE J. Quantum Electron., vol. 44, no. 4, pp. 378-382, Apr. 2008.
10. D. S. G. Ong, M. M. Hayat, J. P. R. David, and J. S. Ng, "Sensitivity of high-speed lightwave system receivers using InAlAs avalanche photodiodes," IEEE Photon. Technol. Lett., vol. 23, no. 4, pp. 233-235, Feb. 2011.
11. Y. Kang, H.-D. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y.-H. Kuo, H.-W. Chen,W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, "Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product," Nature Photon., vol. 3, no. 1, pp. 59-63, Jan. 2009.
12. R. B. Emmons, "Avalanche-photodiode frequency response," J. Appl. Phys., vol. 38, no. 9, pp. 3705-3714, Aug. 1967.
13. S. Xie and C. H. Tan, "AlAsSb avalanche photodiodes with a sub-mV/K temperature coefficient of breakdown voltage," IEEE J. Quantum Electron., vol. 47, no. 11, pp. 1391-1395, Nov. 2011.
14. K. F. Li, D. S. Ong, J. P. R. David, G. J. Rees, R. C. Tozer, P. N. Robson, and R. Grey, "Avalanche multiplication noise characteristics in thin GaAs p+-i-n+ diodes," IEEE Trans. Electron Devices, vol. 45, no. 10, pp. 2102-2107, Oct. 1998. (Pubitemid 128737853)
15. S. Y. Kim, J. D. Song, and T. W. Kim, "Effect of InAs thickness on the structural and the electrical properties of InAs layers grown on GaAs substrates with AlAs0.32Sb0.68 buffer layer," J. Korean Phys., vol. 58, no. 5, pp. 1347-1350, May 2011.
16. D. E. Aspnes, S. M. Kelso, R. A. Logan, and R. Bhat, "Optical properties of AlxGa1?xAs," J. Appl. Phys., vol. 60, no. 2, pp. 754-767, Jul. 1986.
17. R. Rousina, C. Halpin, and J. B. Webb, "Growth and characterization of In1?xGaxSb by metalorganic magnetron sputtering," J. Appl. Phys, vol. 68, no. 5, pp. 2181-2186, Sep. 1990.
18. G. B. Stringfellow and P. E. Greene, "Liquid phase epitaxial growth of InAs1?xSbx," J. Electrochem. Soc., vol. 188, no. 5, pp. 805-810, 1971.
19. M. R. Lorenz, R. Chicotka, and G. D. Pettit, "The fundamental absorption edge of AlAs and AlP," Solid State Commun., vol. 8, no. 9, pp. 693-697, Mar. 1970.
20. K. Strossner, S. Yes, K. Kim, and M. Cardona, "Dependence of the direct and indirect gap of AlSb on hydrostatic pressure," Phys. Rev. B, Condens. Matter, vol. 33, no. 6, pp. 4044-4053, Mar. 1986.
21. S. Adachi, "The absorption coefficient versus photon energy for x = 0.47, 300 K," Physical Properties of III-V Semiconductor Compounds. New York: Wiley, 1992. [Online]. Available: http://www.ioffe.ru/SVA/NSM/Semicond/ GaInAs/optic.html
22. N. Georgiev and T.Mozeme, "Optical properties of InGaAs/AlAsSb Type I single quantum wells lattice matched to InP," J. Vac. Sci. Technol. B, vol. 19, no. 5, pp. 1747-1751, Jun. 2001. (Pubitemid 33008419)
23. N. Georgiev and T. Mozume, "Photoluminescence study of InGaAs/AlAsSb heterostructure," J. Appl. Phys, vol. 89, no. 2, pp. 1064-1069, Jan. 2001. (Pubitemid 33661858)
24. S. A. Plimmer, J. P. R. David, D. C. Herbert, T. W. Lee, G. J. Rees, P. A. Houseton, R. Grey, P. N. Robson, A. W. Higgs, and D. R. Wight, "Investigation of impact ionization in thin GaAs diodes," IEEE Trans. Electron Devices, vol. 43, no. 7, pp. 1066-1072, Jul. 1996. (Pubitemid 126769108)
25. S. A. Plimmer, J. P. R. David, R. Grey, and G. J. Rees, "Avalanche multiplication in AlxGa1?xAs," IEEE Trans. Electron Devices, vol. 47, no. 5, pp. 1089-1098, May 2000.
26. C. H. Tan, R. Ghin, J. P. R. David, G. J. Rees, and M. Hopkinson, "The effect of dead space on gain and excess noise in In0.48Ga0.52P p+in+ diodes," Semicond. Sci. Technol., vol. 18, no. 8, pp. 803-806, Jul. 2003.
27. H. K. Jung, K. Taniguchi, and C. Hamaguchi, "Impact ionization model for full band Monte Carlo simulation in GaAs," J. Appl. Phys., vol. 79, no. 5, pp. 2473-2480, Nov. 1995. (Pubitemid 126530590)
28. P. Yuan, C. C. Hansing, K. A. Anselm, C. V. Lenox, H. Nie, A. L. Holmes, Jr., B. G. Streetman, and J. C. Campbell, "Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses," IEEE J. Quantum. Electron., vol. 36, no. 2, pp. 198-204, Feb. 2000. (Pubitemid 30557828)
29. C. H. Tan, S. Xie, and J. Xie, "Low noise avalanche photodiodes incorporating a 40 nm AlAsSb avalanche region," IEEE J. Quantum Electron., vol. 48, no. 1, pp. 36-41, Jan. 2012.