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Volumn 44, Issue 4, 2004, Pages

Characteristics of a planar InP/InGaAs avalanche photodiode with a thin multiplication layer

Author keywords

Avalanche photodiode; Breakdown voltage; III V semiconductor; Multiplication; Photodetector; Reliability

Indexed keywords

EID: 2442570758 PISSN: 03744884 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (14)

References (12)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.