Epitaxial growth of Bi ultra-thin films on GaAs by electrodeposition

Materials Chemistry and Physics

Volumn 134, Issue 1, 2012, Pages 523-530

  Plaza, M ^a,d   Abuin M ^a,b   Mascaraque, A ^a,b   Gonzalez Barrio M A ^a,b   Perez L ^a,c  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b INSTITUTO DE QUÍMICA FÍSICA ROCASOLANO   (Spain)

^c UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^d School of Operations Research and Industrial Engineering   (United States)

Author keywords

Atomic Force Microscopy (AFM); Electrochemical tecniques; Epitaxial growth; Thin films

Indexed keywords

BI-LAYER; BISMUTH FILM; ELECTROCHEMICAL DEPOSITION; ELECTROCHEMICAL TECNIQUES; GAAS; GAAS (1 1 0); GAAS SUBSTRATES; OVERPOTENTIAL;

ATOMIC FORCE MICROSCOPY; ELECTRODEPOSITION; EPITAXIAL GROWTH; GALLIUM ARSENIDE; REDUCTION; SEMICONDUCTING GALLIUM; THIN FILMS; ULTRATHIN FILMS; X RAY DIFFRACTION;

BISMUTH;

EID: 84860232120     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2012.03.027     Document Type: Article

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