Interaction of bismuth with the GaAs(111)B surface

Applied Surface Science

Volumn 152, Issue 3, 1999, Pages 169-176

  McGinley, C ^a   Cafolla, A A ^a   Murphy, B ^b   Teehan, D ^b   Moriarty, P ^c  

^a DUBLIN CITY UNIVERSITY   (Ireland)

^b DARESBURY LABORATORY   (United Kingdom)

^c UNIVERSITY OF NOTTINGHAM   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH; CHEMICAL BONDS; CRYSTAL ORIENTATION; LOW ENERGY ELECTRON DIFFRACTION; MATHEMATICAL MODELS; PHOTOELECTRON SPECTROSCOPY; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SURFACE PHENOMENA; SURFACE STRUCTURE; SYNCHROTRON RADIATION; THERMODYNAMIC STABILITY;

SURFACE RECONSTRUCTION; SURFACE RELAXATION; TRIMERS;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 0033221911     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(99)00311-6     Document Type: Article

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