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Journal of Applied Physics

Volumn 104, Issue 3, 2008, Pages

Electrical transport properties of n -type (110)-oriented bismuth thin films grown at 110 K on glass substrates

(2) Wu, Keng Shuo a Chern, Ming Yau a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BISMUTH; ELECTRIC PROPERTIES; GLASS; IMAGING TECHNIQUES; MICROSCOPIC EXAMINATION; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SCANNING PROBE MICROSCOPY; SURFACE ROUGHNESS; THICK FILMS; THIN FILMS; TRANSPORT PROPERTIES; VACUUM DEPOSITION; X RAY DIFFRACTION;

BI THIN FILMS; BISMUTH THIN FILMS; CONDUCTION TYPE; ELECTRICAL PROPERTIES; ELECTRICAL TRANSPORT PROPERTIES; GLASS SUBSTRATES; HALL COEFFICIENTS; HIGHER TEMPERATURES; IN-VACUUM; PREFERRED ORIENTATION; QUANTUM SIZE EFFECT; ROOM TEMPERATURES; STRUCTURE AND PROPERTIES; THICKNESS DEPENDENCES; X-RAY REFLECTIVITY;

MOLECULAR BEAM EPITAXY;

EID: 49749122201 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.2957055 Document Type: Article

Times cited : (13)

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