Full three-dimensional simulation of focused ion beam micro/nanofabrication

Nanotechnology

Volumn 18, Issue 24, 2007, Pages

  Kim, Heung Bae ^a   Hobler, Gerhard ^a   Steiger, Andreas ^a   Lugstein, Alois ^a   Bertagnolli, Emmerich ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; MATHEMATICAL MODELS; NANOTECHNOLOGY; SPUTTERING; THREE DIMENSIONAL; TOPOGRAPHY;

3D TOPOGRAPHY; AMADEUS 3D; REDEPOSITION; UNSTRUCTURED GRIDS;

FOCUSED ION BEAMS;

QUANTUM DOT;

ARTICLE; NANOFABRICATION; PRIORITY JOURNAL; TOPOGRAPHY;

EID: 34249649624     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/24/245303     Document Type: Article

References (15)

1. Melngailis J 1987 Focused ion beam technology and applications J. Vac. Sci. Technol. B 5 469-95
2. Kim H B, Hobler G, Lugstein A and Bertagnolli E 2007 Simulation of ion beam induced micro/nanofabrication J. Micromech. Microeng. accepted
3. Katardjiev I V, Carter G, Nobes M J, Berg S and Blom H O 1994 Three-dimensional simulation of surface evolution during growth and erosion J. Vac. Sci. Technol. A 12 61-7
4. Biersack J P and Berg S 1991 T-DYN Monte Carlo simulations applied to ion assisted thin film processes Nucl. Instrum. Methods B 59 21-7
5. Vasile M J, Xie J and Nassar R 1999 Depth control of focused ion-beam milling from a numerical model of the sputter process J. Vac. Sci. Technol. B 17 1085-90
6. Orloff J, Utlaut M and Swanson L 2003 High Resolution Focused ion Beams: FIB and its Applications (New York: Kluwer-Academic)
7. Santamore D, Edinger K, Orloff J and Melngailis J 1997 Focused ion beam sputter yield change as a function of scan speed J. Vac. Sci. Technol. B 15 1346-9
8. Ziegler F 2003 SRIM Instruction Manual http://www.srim.org
9. Moeller W and Posselt M 2002 TRYDYN_FZR User Manual (Dresden: Forschungszentrum Rossendorf)
10. Bischoff L, Teichert J and Heera V 2001 Focused ion beam sputtering investigations on SiC Appl. Surf. Sci. 184 372-6
11. Frey L, Lehrer C and Ryssel H 2003 Nanoscale effects in focused ion beam processing Appl. Phys. A 76 1017-23
12. Adams D P and Vasile M J 2006 Accurate focused ion beam sculpting of silicon using variable pixel dwell time approach J. Vac. Sci. Technol. B 24 836-44
13. Plummer D, Deal D and Griffin B 2000 Silicon VLSI Technology (Englewood Cliffs, NJ: Prentice-Hall)
14. Yamaguchi H, Shimase A, Haraichi S and Miyauchi T 1985 Characteristics of silicon removal by fine focused gallium ion beam J. Vac. Sci. Technol. B 3 71-4
15. Pellerin J G, Griffis D P and Russell P E 1990 Focused ion beam machining of Si, GaAs and InP J. Vac. Sci. Technol. B 8 1945-50