Band gap shift in Al1-xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy

Applied Physics Letters

Volumn 98, Issue 14, 2011, Pages

  Cavalcoli, Daniela ^a   Pandey, Saurabh ^a   Fraboni, Beatrice ^a   Cavallini, Anna ^a  

^a UNIVERSITY OF BOLOGNA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; BAND GAP SHIFTS; BURSTEIN; ELECTRON DENSITIES; GAN-BASED HETEROSTRUCTURES; HETEROSTRUCTURES; RENORMALIZATION EFFECTS; SURFACE PHOTOVOLTAGE SPECTROSCOPY; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

CRYSTALS; ELECTRON GAS; ELECTRON MOBILITY; ENERGY GAP; GALLIUM NITRIDE; HALL EFFECT; HETEROJUNCTIONS; ORGANIC CHEMICALS; PHASE INTERFACES; SURFACE PROPERTIES; TWO DIMENSIONAL ELECTRON GAS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79954509214     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3576938     Document Type: Article

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