InAlN - A new barrier material for GaN-based HEMTs

Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Volumn , Issue , 2007, Pages 311-316

  Kohn, Erhard ^a   Medjdoub, Farid ^a  

^a UNIVERSITY OF ULM   (Germany)

Author keywords

High power devices; High temperature electronics; III nitrides; InAlN GaN heterostructure

Indexed keywords

CHARGE DENSITY; ELECTRIC CONDUCTIVITY; GALLIUM ALLOYS; GALLIUM NITRIDE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR MATERIALS; SEMICONDUCTOR SWITCHES;

ALGAN/GAN; BARRIER MATERIALS; HETERO JUNCTION; HIGH POWER DEVICES; HIGH POWERS; HIGH TEMPERATURE ELECTRONICS; HIGH-THERMAL-STABILITY; III-NITRIDES; INALN/GAN HETEROSTRUCTURE; LATTICE MATCHED MATERIALS; SHEET CHARGE DENSITIES; TEMPERATURE PERFORMANCE;

SEMICONDUCTOR DEVICES;

EID: 49749089335     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWPSD.2007.4472506     Document Type: Conference Paper

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