Nanocrack-induced leakage current in AlInN/AlN/GaN

Scripta Materialia

Volumn 66, Issue 6, 2012, Pages 327-330

  Minj, Albert ^a   Cavalcoli, Daniela ^a   Pandey, Saurabh ^a   Fraboni, Beatrice ^a   Cavallini, Anna ^a   Brazzini, Tommaso ^b   Calle, Fernando ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

AlInN AlN GaN; C AFM; Indium; Nano cracks; Segregation

Indexed keywords

ALINN/ALN/GAN; ALN; C-AFM; COMPOSITION FLUCTUATIONS; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CONDUCTIVE PATHS; GATE-LEAKAGE CURRENT; INDIUM SEGREGATION; NANO-CRACKS; RECTIFYING BEHAVIORS; REVERSE-BIAS; SCHOTTKY CONTACTS; THREADING DISLOCATION;

ALUMINUM; ATOMIC FORCE MICROSCOPY; CRACK TIPS; CRYSTALS; ELECTRIC PROPERTIES; INDIUM; LEAKAGE CURRENTS; SEGREGATION (METALLOGRAPHY); THERMAL VARIABLES MEASUREMENT;

CRACKS;

EID: 84855890167     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2011.11.024     Document Type: Article

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