Preparation of IGZO sputtering target and its applications to thin-film transistor devices

Ceramics International

Volumn 38, Issue 5, 2012, Pages 3977-3983

  Lo, Chun Chieh ^a   Hsieh, Tsung Eong ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

IGZO; Interfacial traps density; Thin film transistor

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; CHEMICAL DISPERSION; DEVICE PERFORMANCE; ELECTRICAL MEASUREMENT; ELECTRICAL PERFORMANCE; HYBRID PROCESS; IGZO; IN-GA-ZN-O; INTERFACIAL TRAPS; MECHANICAL GRINDING; NANO SCALE; ON/OFF RATIO; POST ANNEALING; RELATIVE DENSITY; SATURATION MOBILITY; SPUTTERING TARGET; SUBTHRESHOLD; THIN FILM TRANSISTORS (TFT); ZNO POWDER;

ANNEALING; GALLIUM; SINTERING; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84859770516     PISSN: 02728842     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ceramint.2012.01.052     Document Type: Article

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