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e-Journal of Surface Science and Nanotechnology

Volumn 7, Issue , 2009, Pages 273-276

Properties of amorphous transparent conductive In-Ga-Zn oxide films deposited on fused quartz by the PLD method

(5) Tominaga, Kikuo a Tsuzuki, Takashi a Maruyama, Takayuki a Mikawa, Michio b Moriga, Toshihiro a

a UNIVERSITY OF TOKUSHIMA (Japan)

b NATIONAL INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Amorphous TCO; High mobility oxide; IGZO; Wide bandgap TCO

Indexed keywords

AMORPHOUS FILMS; CARRIER CONCENTRATION; CONDUCTIVE FILMS; ENERGY GAP; EXCIMER LASERS; GALLIUM COMPOUNDS; HALL MOBILITY; II-VI SEMICONDUCTORS; OPTICAL BAND GAPS; POWDERS; PULSED LASER DEPOSITION; PULSED LASERS; QUARTZ; SEMICONDUCTING INDIUM COMPOUNDS; TERNARY ALLOYS; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

HIGH MOBILITY; IGZO; OPTICAL BAND GAP ENERGY; STOICHIOMETRIC COMPOSITIONS; TRANSPARENT CONDUCTIVE; TRANSPARENT CONDUCTIVE OXIDE FILMS; VISIBLE-LIGHT WAVELENGTHS; WIDE BAND GAP;

OXIDE FILMS;

EID: 68249102103 PISSN: None EISSN: 13480391 Source Type: Journal
DOI: 10.1380/ejssnt.2009.273 Document Type: Conference Paper

Times cited : (5)

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