Improved properties of barium strontium titanate thin films grown on copper foils by pulsed laser deposition using a self-buffered layer

Journal of Physics D: Applied Physics

Volumn 45, Issue 17, 2012, Pages

  Liu, Shanshan ^a   Ma, Beihai ^a   Narayanan, Manoj ^a   Chao, Sheng ^a   Koritala, Rachel ^a   Balachandran, Uthamalingam ^a  

^a ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM STRONTIUM TITANATE THIN FILMS; BST FILM; BST THIN FILMS; COPPER FOILS; DEPOSITION CONDITIONS; DIELECTRIC LOSS TANGENT; FERROELECTRIC HYSTERESIS LOOP; LOW OXYGEN PARTIAL PRESSURE; LOW TEMPERATURES; ROOM TEMPERATURE; SECONDARY PHASIS; SINGLE-CRYSTAL SUBSTRATES; SUBSTRATE OXIDATION; TIO;

BUFFER LAYERS; DIELECTRIC LOSSES; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

COPPER;

EID: 84859755909     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/45/17/175304     Document Type: Article

References (36)

1. Brennecka G L, Ihlefeld J F, Maria J-P, Tuttle B A and Clem P G 2010 J. Am. Ceram. Soc. 93 3935
2. Padmini P, Taylor T R, Lefevre M J, Nagra A S, York R A and Speck J S 1999 Appl. Phys. Lett. 75 3186
3. Dawley J T and Clem P G 2002 Appl. Phys. Lett. 81 3028
4. Maria C Gust, Leslie A Momoda, Neal D Evans and Martha L Mecartney 2001 J. Am. Ceram. Soc. 84 1087
5. Sigman J, Brennecka G L, Clem P G and Tuttle B A 2008 J. Am. Ceram. Soc. 91 1851
6. Ihlefeld J F, Vodnick A M, Baker S P, Borland W J and Maria J-P 2008 J. Appl. Phys. 103 074112
7. Li T K, Zawadzki P, Stall R A, Liang S H and Lu Y C 1997 Integr. Ferroelectr. 17 12739
8. Laughlin B, Ihlefeld J and Maria J-P 2005 J. Am. Ceram. Soc. 88 26524
9. Ihlefeld J F, Maria J-P and Borland W 2005 J. Mater. Res. 20 2838
10. Aygun S M, Daniels P, Borland W and Maria J P 2008 J. Appl. Phys. 103 084123
11. Feng Z, Chen W and Tan O-K 2009 Mater. Res. Bull. 44 170911
12. Zhu X, Peng W, Miao J and Zheng D 2004 Mater. Lett. 58 20458
13. Choi W, Kang B S, Jia Q X, Matias V and Findikoglu A T 2006 Appl. Phys. Lett. 88 062907
14. Campbell A L, Biggers R R, Subramanyam G, Kozlowski G, Kleismit R A, Zate H N, Hopkins S C, Glowacki B A, Riehl B D and Peterson T L 2008 Nanotechnology 19 485704
15. Balachandran U, Kwon D K, Narayanan M and Ma B 2010 J. Eur. Ceram. Soc. 30 365
16. Ma B, Kwon D K, Narayanan M and Balachandran U 2009 J. Electroceram. 22 383
17. Maria J-P, Cheek K, Streiffer S, Kim S-H, Dunn G and Kingon A 2001 J. Am. Ceram. Soc. 84 2436
18. Ong R J, Dawley J T and Clem P G 2003 J. Mater. Res. 18 23107
19. Narayanan M, Kwon D-K, Ma B and Balachandran U 2008 Appl. Phys. Lett. 92 252905
20. Fan Y, Yu S, Sun R, Li L, Du R and Yin Y 2009 Appl. Surf. Sci. 255 8319
21. Jeon Y-A, Shin W-C, Seo T-S and Yoon S-Gl 2002 J. Mater. Res. 17 2831
22. Park C-H and Son Y-G 2006 Mater. Sci. Forum 510511 103841
23. Lee B-T et al 1999 J. Electron. Mater. 28 L9
24. Wu C G, Li Y R, Zhu J, Liu X Z and Zhang W L 2009 J. Appl. Phys. 105 044107
25. Choi Y-C, Lee J and Lee B-S 1997 Japan. J. Appl. Phys. 36 6824
26. Losego M D, Ihlefeld J F and Maria J-P 2005 Appl. Phys. Lett. 86 172906
27. Baumert B A et al 1997 J. Appl. Phys. 82 2558
28. Ihlefeld J F, Laughlin B, Lowery A H, Borland W J, Kingon A and Maria J-P 2005 J. Electroceram. 14 95102
29. Fukuda Y, Numata K, Aoki K and Nishimura A 1996 Japan. J. Appl. Phys. 35 517880
30. Jonscher A K 1999 J. Phys. D: Appl. Phys. 32 R5770
31. Kinder L, Zhang X F, Grigorov I L, Kwon C, Jia Q X, Luo L and Zhao J 1999 J. Vac. Sci. Technol. A 17 2148
32. Moazzami R, Hu C and Shepherd W H 1992 IEEE Trans. Electron Devices 39 2044
33. Scott J F 2000 Ferroelectric Memories (Berlin: Springer)
34. Chen A, Zhi Y and Cross L E 2000 Phys. Rev. B 62 228
35. Pike G E, Warren W L, Dimos D, Tuttle B A, Ramesh R, Lee J, Keramidas V G and Evans J T 1995 Appl. Phys. Lett. 66 484
36. Warren W-L, Dimos D and Waser R-M 1996 MRS Bull. 21 40