High dielectric constant BaxSr1-xTiO3 (BST) thin films made by mocvd techniques for dram applications

Integrated Ferroelectrics

Volumn 17, Issue 1-4, 1997, Pages 127-139

  Li, Tingkai ^a   Zawadzki, Pete ^a   Stall, Rick A ^a   Liang, Shaohua ^b   Lu, Yicheng ^b  

^a EMCORE Corporation   (United States)

^b RUTGERS UNIVERSITY   (United States)

Author keywords

BST; Dielectric constant; DRAM; MOCVD; Thin films

Indexed keywords

BARIUM COMPOUNDS; CRYSTAL MICROSTRUCTURE; ELECTRODES; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; PLASMA APPLICATIONS; PLATINUM; RANDOM ACCESS STORAGE; THIN FILMS;

BARIUM STRONTIUM TITANATE;

DIELECTRIC FILMS;

EID: 0031335931     PISSN: 10584587     EISSN: None     Source Type: Journal    
DOI: 10.1080/10584589708012988     Document Type: Article

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