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Volumn 12, Issue 4, 2012, Pages 1851-1856

Formation mechanism and optical properties of InAs quantum dots on the surface of GaAs nanowires

Author keywords

formation mechanism; MOCVD; Nanowire; optical properties; quantum dots

Indexed keywords

ADATOM DIFFUSION; DEPOSITION TIME; EVOLUTION PROCESS; FABRY-PEROT CAVITY; FORMATION MECHANISM; GAAS; GAIN MEDIUM; HYBRID STRUCTURE; INAS; INAS QUANTUM DOTS; MODEL-BASED OPC; NEAR-INFRARED LASERS; OPTICAL DETECTORS; PEAK WAVELENGTH; PHOTOLUMINESCENCE EMISSION; ROOM TEMPERATURE;

EID: 84859732280     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl204204f     Document Type: Article
Times cited : (40)

References (34)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.