Strain self-releasing mechanism in heteroepitaxy on nanowires

Journal of Physical Chemistry C

Volumn 113, Issue 28, 2009, Pages 12402-12406

  Li, Xinlei ^a   Yang, Guowei ^a  

^a SUN YAT SEN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CORE SHELL STRUCTURE; CORE-SHELL; CURVE SURFACE; DEVICE PHYSICS; FUNCTIONAL UNITS; HETEROEPITAXIAL GROWTH; HETEROEPITAXY; HETEROSTRUCTURES; NANO-SIZED; ONE-DIMENSIONAL; PHYSICAL MECHANISM; QUANTUM DOTS; SELF-ASSEMBLY; SEMICONDUCTOR HETEROSTRUCTURES; THEORETICAL PREDICTION;

CRYSTALS; ELECTRIC WIRE; EPITAXIAL LAYERS; HETEROJUNCTIONS; NANOWIRES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SURFACE CHEMISTRY; SURFACE RELAXATION;

EPITAXIAL GROWTH;

EID: 68149136601     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp9019766     Document Type: Article

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