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note
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Under our growth conditions, nanowires were wurtzite or wurtzite with stacking faults. This is, in general, in agreement with a systematic study of the effect of growth conditions on the crystal structure of InAs nanowires described in ref 18. In general, they found that the wurtzite structure was favored over zinc blende at higher growth temperatures and larger V-III precursor ratios.
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JCPDS card 89-4168 (InAs) International Centre for Diffraction Data
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JCPDS card 89-4168 (InAs) International Centre for Diffraction Data
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Veeco MESP-LM tips
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Veeco MESP-LM tips.
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Details of the MFM profile modeling are presented in the Supporting Information.
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Schippan, F.; Behme, G.; Daweritz, L.; Ploog, K. H.; Dennis, B.; Neumann, K. U.; Ziebeck, K. R. A. J. Appl. Phys. 2000, 88, 2766.
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Ziebeck, K.R.A.7
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note
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SPI Supplies: Silicon Nitride Membrane Window Grids, 100 nm thickness.
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