Characterization and modeling of graphene transistor low-frequency noise

IEEE Transactions on Electron Devices

Volumn 59, Issue 2, 2012, Pages 516-519

  Grandchamp, B ^a   Fregonese S ^a   Majek, C ^a   Hainaut, C ^a   Maneux, C ^a   Meng, N ^b   Happy, H ^b   Zimmer, T ^a  

^a UNIVERSITÉ DE BORDEAUX   (France)

^b CNRS   (France)

Author keywords

Compact model; graphene; low frequency noise; simulation program with integrated circuit emphasis (SPICE); transistor

Indexed keywords

CHANNEL AREA; COMPACT MODEL; CURRENT NOISE; DC CHARACTERIZATION; FLICKER NOISE; GRAPHENE LAYERS; GRAPHENE TRANSISTORS; JOHNSON NOISE; LOW-FREQUENCY NOISE; LOW-FREQUENCY NOISE MEASUREMENTS; NOISE LEVELS; NOISE MEASUREMENTS; NOISE SOURCE; QUADRATIC DEPENDENCE; SIC SUBSTRATES; SIMULATION PROGRAM WITH INTEGRATED CIRCUIT EMPHASIS;

ACOUSTIC NOISE MEASUREMENT; COMPUTER SIMULATION; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; GRAPHENE; SILICON CARBIDE; THERMAL NOISE; TRANSISTORS;

SPICE;

EID: 84856257479     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2175930     Document Type: Article

References (16)

1. H. Wang, A. Hsu, J. Wu, J. Kong, and T. Palacios, "Graphene-based ambipolar RF mixers," IEEE Electron Device Lett., vol. 31, no. 9, pp. 906-908, Sep. 2010.
2. J. S. Moon, D. Curtis, D. Zehnder, S. Kim, D. K. Gaskill, G. G. Jernigan, R. L. Myers-Ward, C. R. Eddy, P. M. Campbell, K. Lee, and P. Asbeck, "Low-phase-noise graphene FETs in ambipolar RF applications," IEEE Electron Device Lett., vol. 32, no. 3, pp. 270-272, Mar. 2011.
3. E. Pince and C. Kocabas, "Investigation of high frequency performance limit of graphene field effect transistors," Appl. Phys. Lett., vol. 97, no. 17, p. 173106, Oct. 2010.
4. G. Xu, C. M. Torres, Y. Zhang, F. Liu, E. B. Song, M. Wang, Y. Zhou, C. Zeng, and K. L. Wang, "Effect of spatial charge inhomogeneity on 1/f noise behavior in graphene," Nano Lett., vol. 10, no. 9, pp. 3312-3317, Sep. 2010.
5. S. Rumyantsev, G. Liu, W. Stillman, M. Shur, and A. A. Balandin, "Electrical and noise characteristics of graphene field-effect transistors: Ambient effects, noise sources and physical mechanisms," J. Phys.: Condens. Matter, vol. 22, no. 39, p. 395302, Oct. 2010.
6. Q. Shao, G. Liu, D. Teweldebrhan, A. Balandin, S. Rumyantsev, M. Shur, and D. Yan, "Flicker noise in bilayer graphene transistors," IEEE Electron Device Lett., vol. 30, no. 3, pp. 288-290, Mar. 2009.
7. Z. Chen, Y. Lin, M. J. Rooks, and P. Avouris, "Graphene nano-ribbon electronics," Phys. E: Low-Dimensional Syst. Nanostruct., vol. 40, no. 2, pp. 228-232, Dec. 2007. (Pubitemid 350102338)
8. A. N. Pal, A. A. Bol, and A. Ghosh, "Large low-frequency resistance noise in chemical vapor deposited graphene," Appl. Phys. Lett., vol. 97, no. 13, p. 133504, Sep. 2010.
9. G. Liu, W. Stillman, S. Rumyantsev, Q. Shao, M. Shur, and A. A. Balandin, "Low-frequency electronic noise in the double-gate single-layer graphene transistors," Appl. Phys. Lett., vol. 95, no. 3, p. 033103, Jul. 2009.
10. G. Xu, J. Bai, C. M. Torres, E. B. Song, J. Tang, Y. Zhou, X. Duan, Y. Zhang, and K. L. Wang, "Low-noise submicron channel graphene nanoribbons," Appl. Phys. Lett., vol. 97, no. 7, p. 073107, Aug. 2010.
11. G. Xu, J. Bai, C. Torres, E. Song, J. Tang, Y. Zhou, X. Duan, Y. Zhang, Y. Huang, and K. Wang, "Nanowire-mask based fabrication of high mobility and low noise graphene nanoribbon short-channel field-effect transistors," in Proc. DRC, 2010, pp. 71-72.
12. N. Meng, J. F. Fernandez, D. Vignaud, G. Dambrine, and H. Happy, "Fabrication and characterization of an epitaxial graphene nanoribbonbased field-effect transistor," IEEE Trans. Electron Devices, vol. 58, no. 6, pp. 1594-1596, Jun. 2011.
13. S. Frégonèse, N. Meng, H.-N. Nguyen, C. Majek, C. Maneux, T. Zimmer, and H. Happy, "Electrical Modeling of Graphene Transistors," 2011.
14. I. Meric, M. Y. Han, A. F. Young, B. Ozyilmaz, P. Kim, and K. L. Shepard, "Current saturation in zero-bandgap, top-gated field-effect transistors," Nat. Nanotechnol., vol. 3, pp. 654-659, Nov. 2008.
15. N. Meng, J. F. Fernandez, D. Vignaud, G. Dambrine, and H. Happy, "Influence of temperature on high frequency performance of graphene nano ribbon field effect transistor," in Proc. Device Res. Conf., 2010, pp. 69-70.
16. N. Meng, J. F. Fernandez, D. Vignaud, G. Dambrine, and H. Happy, "A 10 GHz cut-off frequency transistor based on epitaxial graphene nano ribbon," in Proc. EuMIC, Eur. Microw. Week-Connecting the World, 2010, pp. 294-297.