Influence of temperature on high frequency performance of graphene nano ribbon field effect transistor

Device Research Conference - Conference Digest, DRC

Volumn , Issue , 2010, Pages 69-70

  Meng, Nan ^a   Fernandez, J Ferrer ^a   Vignaud, Dominique ^a   Dambrine, Gilles ^a   Happy, Henri ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT GAINS; DEVICE PERFORMANCE; GRAPHENE NANO-RIBBON; HIGH FREQUENCY; HIGH FREQUENCY PERFORMANCE; MAXIMUM OSCILLATION FREQUENCY; ROOM TEMPERATURE;

FIELD EFFECT TRANSISTORS; SILICON CARBIDE;

GRAPHENE;

EID: 77957584765     PISSN: 15483770     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/DRC.2010.5551934     Document Type: Conference Paper

References (3)

1. C. Berger, et aI, The Journal Physical Chemistry B, vol. 108, Dec. 2004.
2. L. Nougaret et aI, Applied Physics Letters, vol. 94, June. 2009.
3. Y.-M Lin, et et aI, Science, vol. 327, Febr. 2010.