A 10 GHz cut-off frequency transistor based on epitaxial graphene nano ribbon

European Microwave Week 2010: Connecting the World, EuMIC 2010 - Conference Proceedings

Volumn , Issue , 2010, Pages 294-297

  Meng, Nan ^a   Fernandez, J Ferrer ^a   Vignaud, Dominique ^a   Dambrine, Gilles ^a   Happy, Henri ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT GAINS; EPITAXIAL GRAPHENE; GRAPHENE NANO-RIBBON; HIGH-FREQUENCY CHARACTERIZATION; SMALL SIGNAL EQUIVALENT CIRCUIT; THERMAL DECOMPOSITIONS;

FIELD EFFECT TRANSISTORS; PYROLYSIS; SILICON CARBIDE;

GRAPHENE;

EID: 78649574245     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (21)

1. K.S. Novoselov, A.K. Geim, S.V. Morozov, D. Jiang, Y. Zhang, S.V. Dubonos, I.V. Grigorieva, et A.A. Firsov, "Electric Field Effect in Atomically Thin Carbon Films," Science, vol. 306, Oct. 2004, pp. 666-669.
2. Mark Wilson, "electrons in atomically thin carbon sheets behave like massless particles," Physics Today, Jan. 2006, p. 21.
3. S.V. Morozov, K.S. Novoselov, M.I. Katsnelson, F. Schedin, D.C. Elias, J.A. Jaszczak, et A.K. Geim, "Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer," Physical Review Letters, vol. 100, Jan. 2008, pp. 016602-4.
4. M. Orlita, C. Faugeras, P. Plochocka, P. Neugebauer, G. Martinez, D.K. Maude, A. Barra, M. Sprinkle, C. Berger, W.A. de Heer, et M. Potemski, "Approaching the Dirac Point in High-Mobility Multilayer Epitaxial Graphene," Physical Review Letters, vol. 101, Déc. 2008, pp. 267601-4.
5. K. Bolotin, K. Sikes, Z. Jiang, M. Klima, G. Fudenberg, J. Hone, P. Kim, et H. Stormer, "Ultrahigh electron mobility in suspended graphene," Solid State Communications, vol. 146, Juin. 2008, pp. 351-355.
6. M. Lemme, T. Echtermeyer, M. Baus, et H. Kurz, "A Graphene Field-Effect Device," Electron Device Letters, IEEE, Vol. 28, 2007, pp. 282-284.
7. Y. Lin, K.A. Jenkins, A. Valdes-Garcia, J.P. Small, D.B. Farmer, et P. Avouris, "Operation of Graphene Transistors at Gigahertz Frequencies," Nano Letters, vol. 9, Jan. 2009, pp. 422-426.
8. I. Meric, M.Y. Han, A.F. Young, B. Ozyilmaz, P. Kim, et K.L. Shepard, "Current saturation in zero-bandgap, top-gated graphene field-effect transistors," Nat Nano, vol. 3, Nov. 2008, pp. 654-659.
9. Jing Zhu et J. Woo, "A novel graphene channel field effect transistor with Schottky tunneling source and drain," Solid State Device Research Conference, 2007. ESSDERC 2007. 37th European, 2007, pp. 243-246.
10. G. Liang, N. Neophytou, M.S. Lundstrom, et D.E. Nikonov, "Ballistic graphene nanoribbon metal-oxide-semiconductor field-effect transistors: A full real-space quantum transport simulation," Journal of Applied Physics, Vol. 102, 2007, pp. 054307-7.
11. I. Forbeaux, J.-. Themlin, et J.-. Debever, "Heteroepitaxial graphite on 6H-SiC(0001): Interface formation through conduction-band electronic structure," Physical Review B (Condensed Matter and Materials Physics), vol. 58, Déc. 1998, pp. 16396-16406.
12. C. Berger, Z. Song, T. Li, X. Li, A.Y. Ogbazghi, R. Feng, Z. Dai, A.N. Marchenkov, E.H. Conrad, P.N. First, et W.A. de Heer, "Ultrathin Epitaxial Graphite: 2D Electron Gas Properties and a Route toward Graphene-based Nanoelectronics," The Journal of Physical Chemistry B, vol. 108, Déc. 2004, pp. 19912-19916.
13. E. Rollings, G.-. Gweon, S.Y. Zhou, B.S. Mun, J.L. McChesney, B.S. Hussain, A.V. Fedorov, P.N. First, W.A. de Heer, et A. Lanzara, "Synthesis and characterization of atomically-thin graphite films on a silicon carbide substrate," cond-mat/0512226, Déc. 2005.
14. I. Meric, N. Baklitskaya, P. Kim, et K. Shepard, "RF performance of top-gated, zero-bandgap graphene field-effect transistors," Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 2008, pp. 1-4.
15. J.S. Moon, D. Curtis, M. Hu, D. Wong, C. McGuire, P.M. Campbell, G. Jernigan, J.L. Tedesco, B. VanMil, R. Myers-Ward, C. Eddy, et D.K. Gaskill, "Epitaxial-Graphene RF Field-Effect Transistors on Si-Face 6H-SiC Substrates," Electron Device Letters, IEEE, Vol. 30, 2009, pp. 650-652.
16. M.Y. Han, B. Ozyilmaz, Y. Zhang, et P. Kim, "Energy Band-Gap Engineering of Graphene Nanoribbons," Physical Review Letters, vol. 98, Mai. 2007, pp. 206805-4.
17. S. Zhou, D. Siegel, A. Fedorov, F. Gabaly, A. Schmid, A.C. Neto, D. Lee, et A. Lanzara, "Origin of the energy bandgap in epitaxial graphene," Nat Mater, vol. 7, Avr. 2008, pp. 259-260.
18. Y. Son, M.L. Cohen, et S.G. Louie, "Energy Gaps in Graphene Nanoribbons," Physical Review Letters, vol. 97, Nov. 2006, pp. 216803-4.
19. P. Shemella, Y. Zhang, M. Mailman, P.M. Ajayan, et S.K. Nayak, "Energy gaps in zero-dimensional graphene nanoribbons," Applied Physics Letters, vol. 91, Juillet. 2007, pp. 042101-3.
20. A. Le Louarn, F. Kapche, J. Bethoux, H. Happy, G. Dambrine, V. Derycke, P. Chenevier, N. Izard, M.F. Goffman, et J. Bourgoin, "Intrinsic current gain cutoff frequency of 30 GHz with carbon nanotube transistors," Applied Physics Letters, vol. 90, Juin. 2007, pp. 233108-3.
21. L. Nougaret, H. Happy, G. Dambrine, V. Derycke, J.-. Bourgoin, A.A. Green, et M.C. Hersam, "80 GHz field-effect transistors produced using high purity semiconducting single-walled carbon nanotubes," Applied Physics Letters, vol. 94, Juin. 2009, pp. 243505-3.