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Applied Surface Science

Volumn 258, Issue 16, 2012, Pages 6003-6006

Low-temperature preparation of polycrystalline germanium thin films by Al-induced crystallization

(3) Peng, Shanglong a Hu, Duokai a He, Deyan a

a LANZHOU UNIVERSITY (China)

Author keywords

Al induced crystallization; Ge films; Raman spectra

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; ANNEALING; ATOMIC FORCE MICROSCOPY; FILM PREPARATION; GERMANIUM; GRAIN SIZE AND SHAPE; MICROSTRUCTURE; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SHEET RESISTANCE; TEMPERATURE; X RAY DIFFRACTION;

AL-INDUCED CRYSTALLIZATIONS; ANNEALING TEMPERATURES; GE FILMS; LOW TEMPERATURE PREPARATION; LOW-FREQUENCY SHIFT; MINIMUM RESISTANCE; POLYCRYSTALLINE GERMANIUM; SHEET RESISTANCE MEASUREMENTS;

THIN FILMS;

EID: 84859561305 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2012.02.080 Document Type: Article

Times cited : (46)

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