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Volumn 33, Issue 4, 2004, Pages 353-357

High Mobility Poly-Ge Thin-Film Transistors Fabricated on Flexible Plastic Substrates at Temperatures below 130°C

Author keywords

High mobility; Plastic substrates; Poly Ge TFTs

Indexed keywords

COMPRESSIVE STRESS; CRYSTALLIZATION; FABRICATION; GATES (TRANSISTOR); GERMANIUM; HOLE MOBILITY; LEAKAGE CURRENTS; PLASTICITY; POLYETHYLENE TEREPHTHALATES; THERMAL EFFECTS; THERMOMECHANICAL TREATMENT;

EID: 2342534499     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0142-6     Document Type: Article
Times cited : (28)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.