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Volumn 33, Issue 4, 2004, Pages 353-357
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High Mobility Poly-Ge Thin-Film Transistors Fabricated on Flexible Plastic Substrates at Temperatures below 130°C
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Author keywords
High mobility; Plastic substrates; Poly Ge TFTs
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Indexed keywords
COMPRESSIVE STRESS;
CRYSTALLIZATION;
FABRICATION;
GATES (TRANSISTOR);
GERMANIUM;
HOLE MOBILITY;
LEAKAGE CURRENTS;
PLASTICITY;
POLYETHYLENE TEREPHTHALATES;
THERMAL EFFECTS;
THERMOMECHANICAL TREATMENT;
CRYSTALLIZATION TEMPERATURES;
FLEXIBLE PLASTIC SUBSTRATES;
HIGH MOBILITY;
THIN FILM TRANSISTORS;
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EID: 2342534499
PISSN: 03615235
EISSN: None
Source Type: Journal
DOI: 10.1007/s11664-004-0142-6 Document Type: Article |
Times cited : (28)
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References (20)
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