Aluminum-induced crystallization of amorphous silicon-germanium thin films

Applied Physics Letters

Volumn 85, Issue 11, 2004, Pages 2134-2136

  Gjukic, M ^a   Buschbeck, M ^a   Lechner, R ^a   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; CRYSTALLIZATION; ELECTRON BEAMS; EUTECTICS; GERMANIUM ALLOYS; INFRARED RADIATION; INTERFACES (MATERIALS); OPTICAL MICROSCOPY; PHASE TRANSITIONS; POLYCRYSTALLINE MATERIALS; QUARTZ; RAMAN SPECTROSCOPY; TEMPERATURE CONTROL;

ALUMINUM-INDUCED LAYER EXCHANGE (ALILE); ELECTRON BEAM EVAPORATION; LASER CRYSTALLIZATION (LC); PHASE SEGREGATION; THERMAL EVAPORATION;

THIN FILMS;

EID: 5544264932     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1789245     Document Type: Article

References (12)

1. J. Olivares, A. Rodriguez, J. Sangrador, T. Rodriguez, C. Ballesteros, and A. Kling, Thin Solid Films 337, 51 (1999).
2. C. Eisele, M. Berger, M. Nerding, H. P. Strunk, C. E. Nebel, and M. Stutzmann, Thin Solid Films 427, 176 (2003).
3. G. Radnoczi, A. Robertsson, H. T.G. Hentzell, S. F. Gong, and M.-A. Hasan, J. Appl. Phys. 69, 6394 (1991).
4. I. Chambouleyron, F. Fajardo, and A. R. Zanatta, Appl. Phys. Lett. 79, 3233 (2001).
5. J. H. Kim and J. Y. Lee, Jpn. J. Appl. Phys., Part 1 35, 2052 (1996).
6. O. Nast, T. Puzzer, L. M. Koschier, A. B. Sproul, and S. R. Wenham, Appl. Phys. Lett. 73, 3214 (1998).
7. G. Petzow and G. Effenberg, Ternary Alloys, Vol. 6 (VCH, New York, 1993), p. 58.
8. S. Gall, M. Muske, I. Sieber, O. Nast, and W. Fuhs, J. Non-Cryst. Solids 299-302, 741 (2002).
9. M. Buschbeck, Diploma thesis, Technische Universität München, 2003.
10. M. A. Renucci, J. B. Renucci, and M. Cardona, Proceedings of the Second International Conference on Light Scattering in Solids (Flammarion Sciences, Paris, 1971).
11. M. I. Alonso and K. Winer, Phys. Rev. B 39, 10056 (1989).
12. M. Gjukic, R. Lechner, M. Buschbeck, and M. Stutzmann (unpublished).