Growth and characterization of CoSi2 films on Si (1 0 0) substrates

Applied Surface Science

Volumn 169-170, Issue , 2001, Pages 315-319

  Takahashi, F ^a   Irie, T ^a   Shi, J ^a   Hashimoto, M ^a  

^a UNIVERSITY OF ELECTRO COMMUNICATIONS   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; FILM GROWTH; FILM PREPARATION; SEMICONDUCTING SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS;

COBALT SILICIDES;

COBALT COMPOUNDS;

EID: 17444443563     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00684-X     Document Type: Article

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