Transmittance from visible to mid infra-red in AZO films grown by atomic layer deposition system

Solar Energy

Volumn 86, Issue 5, 2012, Pages 1306-1312

  Dhakal, Tara ^a   Nandur, Abhishek S ^a   Christian, Rachel ^a   Vasekar, Parag ^a   Desu, Seshu ^a   Westgate, Charles ^a   Koukis, D I ^b   Arenas, D J ^c   Tanner, D B ^b  

^a BINGHAMTON UNIVERSITY   (United States)

^b University of Florida   (United States)

^c UNIVERSITY OF NORTH FLORIDA   (United States)

Author keywords

Aluminum doped zinc oxide; Atomic Layer Deposition; IR transmittance; Transmittance of AZO; Transparent conducting oxide

Indexed keywords

ALUMINUM-DOPED ZINC OXIDE; ATOMIC LAYER; IR TRANSMITTANCE; TRANSMITTANCE OF AZO; TRANSPARENT CONDUCTING OXIDE;

ALUMINUM; OXIDE FILMS; THICK FILMS; ZINC OXIDE;

ATOMIC LAYER DEPOSITION;

ALUMINUM; FILM; INFRARED RADIATION; OXIDE; VISIBLE SPECTRUM;

EID: 84859445741     PISSN: 0038092X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solener.2012.01.022     Document Type: Article

References (36)

1. Agura H., Suzuki A., Matsushita T., Aoki T., Okuda M. Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition. Thin Solid Films 2003, 445:263-267.
2. Arata K., Hino M. Solid catalyst treated with anion: XVIII. Benzoylation of toluene with benzoyl chloride and benzoic anhydride catalysed by solid superacid of sulfate-supported alumina. Appl. Catal. 1990, 59:197-204.
3. Banerjee P., Lee W., Bae K., Lee S.B., Rubloff G.W. Structural, electrical, and optical properties of atomic layer deposition Al-doped ZnO films. J. Appl. Phys. 2010, 108:043504.
4. 4 spinel solid solutions. Solid State Commun. 1981, 39:581-585.
5. Berginski M., Hupkes J., Schulte M., Schope G., Stiebig H., Rech B., Wuttig M. The effect of front ZnO:Al surface texture and optical transparency on efficient light trapping in silicon thin-film solar cells. J. Appl. Phys. 2007, 101:074903.
6. Dhere R.G., Bonnet-Eymard M., Charlet E., Peter E., Duenow J.N., Li J.V., Kuciauskas D., Gessert T.A. CdTe solar cell with industrial Al:ZnO on soda-lime glass. Thin Solid Films 2011, 519:7142-7145.
7. 3 alloy films using atomic layer deposition techniques. Chem. Mater. 2003, 15:1020-1028.
8. George S.M., Ott A.W., Klaus J.W. Surface chemistry for atomic layer growth. J. Phys. Chem. 1996, 100:13121-13131.
9. Gong S.C., Jang J.G., Chang H.J., Park J. The characteristics of organic light emitting diodes with Al doped zinc oxide grown by atomic layer deposition as a transparent conductive anode. Synth. Met. 2011, 161:823-827.
10. Hecht E. Optics 2001, Addison Wesley. fourth ed.
11. Heideman R.G., Lambeck P.V., Gardeniers J.G.E. High quality ZnO layers with adjustable refractive indices for integrated optics applications. Opt. Mater 1995, 4:741-755.
12. Islam M.N., Ghosh T.B., Chopra K.L., Acharya H.N. XPS and X-ray diffraction studies of aluminum-doped zinc oxide transparent conducting films. Thin Solid Films 1996, 280:20-25.
13. Jeong S.H., Lee J.W., Lee S.B., Boo J.H. Deposition of aluminum-doped zinc oxide films by RF magnetron sputtering and study of their structural, electrical and optical properties. Thin Solid Films 2003, 435:78-82.
14. Jin M., Feng J., De-heng Z., Hong-lei M., Shu-ying L. Optical and electronic properties of transparent conducting ZnO and ZnO:Al films prepared by evaporating method. Thin Solid Films 1999, 357:98-101.
15. Kon M., Song P.K., Shigesato Y., Frach P., Mizukami A., Suzuki K. Al-doped ZnO films deposited by reactive magnetron sputtering in mid-frequency mode with dual cathodes. Jpn. J. Appl. Phys. 2002, 41:814-819.
16. Kwon S.J. Effect of precursor-pulse on properties of Al-doped ZnO films grown by atomic layer deposition. Jpn. J. Appl. Phys. 2005, 44:1062-1066.
17. Langer D.W., Vesely C.J. Electronic core levels of Zinc chalcogenides. Phys. Rev. B 1970, 2:4885-4892.
18. Liu Y., Lian J. Optical and electrical properties of aluminum-doped ZnO thin films grown by pulsed laser deposition. Appl. Surf. Sci. 2007, 253:3727-3730.
19. Luka G., Wachnicki L., Witkowski B.S., Krajewski T.A., Jakiela R., Guziewicz E., Godlewski M. The uniformity of Al distribution in aluminum-doped zinc oxide films grown by atomic layer deposition. Mater. Sci. Eng. B 2011, 176:237-241.
20. Ma J., Ji F., Ma H., Li S. Preparation and properties of transparent conducting zinc oxide and aluminium-doped zinc oxide films prepared by evaporating method. Sol. Energy Mater. Sol. Cells 2000, 60:341-348.
21. Mass J., Bhattacharya P., Katiyar R.S. Effect of high substrate temperature on Al-doped ZnO thin films grown by pulsed laser deposition. Mater. Sci. Eng.: B 2003, 103:9-15.
22. 2 and indium tin oxide. Thin Solid Films 1989, 176:277-282.
23. Mondragón-Suárez H., Maldonado A., Olvera M.d.l.L., Reyes A., Castanedo-Pérez R., Torres-Delgado G., Asomoza R. ZnO:Al thin films obtained by chemical spray: effect of the Al concentration. Appl. Surf. Sci. 2002, 193:52-59.
24. Murdoch G.B., Hinds S., Sargent E.H., Tsang S.W., Mordoukhovski L., Lu Z.H. Aluminum doped zinc oxide for organic photovoltaics. Appl. Phys. Lett. 2009, 94:213301.
25. Musat V., Teixeira B., Fortunato E., Monteiro R.C.C., Vilarinho P. Al-doped ZnO thin films by sol-gel method. Surf Coat technol 2004, 180-181:659-662.
26. Park S., Ikegami T., Ebihara K. Growth of transparent conductive Al-doped ZnO thin films and device applications. Jpn. J. Appl. Phys. 2006, 45:8453-8456.
27. Pflug A., Sittinger V., Ruske F., Szyszka B., Dittmar G. Optical characterization of aluminum-doped zinc oxide films by advanced dispersion theories. Thin Solid Films 2004, 455-456:201-206.
28. Radhouane B.H.T. Structural and electrical properties of aluminum-doped zinc oxide films prepared by sol-gel process. J. Eur. Ceram. Soc 2005, 25:3301-3306.
29. Saarenpää H., Niemi T., Tukiainen A., Lemmetyinen H., Tkachenko N. Aluminum doped zinc oxide films grown by atomic layer deposition for organic photovoltaic devices. Sol. Energy Mater. Sol. Cells 2010, 94:1379-1383.
30. Singh A.V., Mehra R.M., Buthrath N., Wakahara A., Yoshida A. Highly conductive and transparent aluminum-doped zinc oxide thin films prepared by pulsed laser deposition in oxygen ambient. J. Appl. Phys. 2001, 90:5661-5665.
31. Suzuki A., Matsushita T., Wada N., Sakamoto Y., Okuda M. Transparent conducting Al-doped ZnO thin films prepared by pulsed laser deposition. Jpn. J. Appl. Phys. 1996, 35:L56-L59.
32. Tang W., Cameron D.C. Aluminum-doped zinc oxide transparent conductors deposited by the sol-gel process. Thin Solid Films 1994, 238:83-87.
33. Vasekar P.S., Dhere N.G., Moutinho H. Development of CIGS2 solar cells with lower absorber thickness. Sol. Energy 2009, 83:1566-1570.
34. Verma A., Khan F., Kumar D., Kar M., Chakravarty B.C., Singh S.N., Husain M. Sol-gel derived aluminum doped zinc oxide for application as anti-reflection coating in terrestrial silicon solar cells. Thin Solid Films 2010, 518:2649-2653.
35. Yang W., Wu Z., Liu Z., Pang A., Tu Y., Feng Z.C. Room temperature deposition of Al-doped ZnO films on quartz substrates by radio-frequency magnetron sputtering and effects of thermal annealing. Thin Solid Films 2010, 519:31-36.
36. Yousfi E.B., Weinberger B., Donsanti F., Cowache P., Lincot D. Atomic layer deposition of zinc oxide and indium sulfide layers for Cu(In, Ga)Se2 thin-film solar cells. Thin Solid Films 2001, 387:29-32.