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Journal of Applied Physics

Volumn 110, Issue 11, 2011, Pages

Thermal energy transport model for macro-to-nanograin polycrystalline semiconductors

(1) Maldovan, Martin a

a Massachusetts Institute of Technology Cambridge (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC DEVICE; GRAIN BOUNDARY SCATTERING; GRAIN SIZE; KAPITZA RESISTANCE; PHENOMENOLOGICAL FORMULA; PHONON MEAN FREE PATH; POLARIZATION DEPENDENCE; POLY-CRYSTALLINE SEMICONDUCTORS; POLYCRYSTALLINE-SI; SIC MATERIALS; THEORETICAL APPROACH; THERMAL BOUNDARY; THERMAL ENERGY TRANSPORT; THERMOELECTRIC MATERIAL; TRANSPORT PROCESS;

AMORPHOUS SEMICONDUCTORS; GRAIN BOUNDARIES; PHONONS; POLYSILICON; SILICON CARBIDE; THERMAL ENERGY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

THERMAL CONDUCTIVITY;

EID: 84859348946 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3665211 Document Type: Article

Times cited : (55)

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