Multiscale modeling of the thermal conductivity of polycrystalline silicon carbide

Journal of Applied Physics

Volumn 106, Issue 8, 2009, Pages

  Crocombette, Jean Paul ^a   Gelebart, Lionel ^b  

^a SERVICE DE RECHERCHES DE MÉTALLURGIE PHYSIQUE   (France)

^b CEA SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE GRAIN SIZE; BOUNDARY STRUCTURE; EDGE DISLOCATION; EFFECTIVE THERMAL CONDUCTIVITY; EXPERIMENTAL VALUES; FINITE ELEMENT; FINITE ELEMENT CALCULATIONS; GRAIN SIZE; HOMOGENIZATION PROCEDURE; KAPITZA RESISTANCE; MOLECULAR DYNAMICS SIMULATIONS; MULTI-SCALE MODELING; POLYCRYSTALLINE SIC; POLYCRYSTALLINE SILICON CARBIDE; THERMAL RESISTANCE; TILT ANGLE; TILT GRAIN BOUNDARY;

GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MOLECULAR DYNAMICS; POLYCRYSTALLINE MATERIALS; POLYCRYSTALS; POLYSILICON; THERMAL CONDUCTIVITY; THERMOANALYSIS;

SILICON CARBIDE;

EID: 70350725999     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3240344     Document Type: Article

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