Increased Phonon Scattering by Nanograins and Point Defects in Nanostructured Silicon with a Low Concentration of Germanium

Physical Review Letters

Volumn 102, Issue 19, 2009, Pages

  Chen, G ^b   Zhu, G H ^a   Lee, H ^b   Lan, Y C ^a   Wang, X W ^a   Joshi, G ^a   Wang, D Z ^a   Yang, J ^a   Vashaee, D ^c   Guilbert, H ^a   Pillitteri, A ^a   Dresselhaus, M S ^d   Ren, Z F ^a  

^a BOSTON COLLEGE   (United States)

^b Massachusetts Institute of Technology Cambridge   (United States)

^c OKLAHOMA STATE UNIVERSITY   (United States)

^d USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BULK CRYSTALLINE; LOW CONCENTRATIONS; NANO GRAINS; NANO-SIZE; NANO-STRUCTURED; NANOSTRUCTURED SILICON; SILICON GERMANIUM; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PROPERTIES;

DEFECTS; GERMANIUM; NANOSTRUCTURES; PHONON SCATTERING; PHONONS; POINT DEFECTS; SILICON; THERMAL CONDUCTIVITY; THERMAL CONDUCTIVITY OF SOLIDS; THERMOANALYSIS; THERMODYNAMIC PROPERTIES; THERMOELECTRIC EQUIPMENT;

SILICON ALLOYS;

EID: 67650474045     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.102.196803     Document Type: Article

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