Structure and composition profile of InAs/GaAs quantum dots capped by an InGaAs and InAlAs combination layer

Nanotechnology

Volumn 21, Issue 25, 2010, Pages

  He, Jun ^a   Wu, Yuan ^b   Wang, Kang L ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; INDIUM ARSENIDE; NANOCRYSTALS; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

ACTIVE REGIONS; CAPPING PROCESS; COMPOSITION PROFILE; CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; INAS QUANTUM DOTS; INAS-GAAS QUANTUM DOTS; LEVELINGS; QUANTUM-DOT LASERS;

GALLIUM ARSENIDE;

EID: 84859332520     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/25/255705     Document Type: Article

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