Growth and optical properties of GaAsSb quantum wells for 1.3 μm VCSELs

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 5, 2001, Pages 1948-1952

  Cunningham, J E ^a   Dinu, M ^a   Shah, J ^a   Quochi, F ^a   Kilper, D ^a   Jan, W Y ^a   Williams, M D ^b   Mills, A ^b   Henderson, W E ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b CLARK ATLANTA UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; DESORPTION; ELECTRON TRANSITIONS; HETEROJUNCTIONS; LASER APPLICATIONS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEGREGATION (METALLOGRAPHY); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

MOLE FRACTION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0035440748     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1406153     Document Type: Article

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