Charged exciton emission at 1.3 μm from single InAs quantum dots grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 87, Issue 17, 2005, Pages 1-3

  Cade, N I ^a   Gotoh, H ^a   Kamada, H ^a   Tawara, T ^a   Sogawa, T ^a   Nakano, H ^a   Okamoto, H ^b  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; CHARGE TRANSFER; EPITAXIAL GROWTH; INDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; SPECTROSCOPIC ANALYSIS;

EXCITON EMISSIONS; LOW-TEMPERATURE PHOTOLUMINESCENCE SPECTROSCOPY;

EXCITONS;

EID: 28344444294     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2093927     Document Type: Article

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