Electrochemical properties of GaN nanowire electrodesinfluence of doping and control by external bias

Nanotechnology

Volumn 23, Issue 16, 2012, Pages

  Wallys, J ^a   Hoffmann, S ^a   Furtmayr, F ^a,b   Teubert, J ^a   Eickhoff, M ^a  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMICAL CHARACTERISTICS; ELECTROCHEMICAL IMPEDANCE SPECTRA; ENSEMBLE AVERAGES; FLAT-BAND VOLTAGE; GAN NANOWIRES; MG-DOPING; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; REDOX COUPLE; SI CONCENTRATION; SI(111) SUBSTRATE; SURFACE CAPACITANCE;

CHARGE TRANSFER; ELECTROCHEMICAL PROPERTIES; ELECTROLYTES; MOLECULAR BEAM EPITAXY; NANOWIRES; SILICON;

GALLIUM NITRIDE;

GALLIUM; GALLIUM NITRIDE; NANOTUBE;

ARTICLE; CHEMISTRY; CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRICITY; EQUIPMENT; EQUIPMENT DESIGN; MATERIALS TESTING; METHODOLOGY; MICROELECTRODE; PARTICLE SIZE; ULTRASTRUCTURE;

CRYSTALLIZATION; ELECTRIC CONDUCTIVITY; ELECTRIC WIRING; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; MATERIALS TESTING; MICROELECTRODES; NANOTUBES; PARTICLE SIZE;

EID: 84859299647     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/16/165701     Document Type: Article

References (18)

1. Kikuchi A, Kawai M, Tada M and Kishino K 2004 InGaN/GaN multiple quantum disk nanocolumn light-emitting diodes grown on (111) Si substrate Japan. J. Appl. Phys. 43 L15246
2. Sakr S, Warde E, Tchernycheva M, Rigutti L, Isac N and Julien F H 2011 Origin of the electrical instabilities in GaN/AlGaN double-barrier structure Appl. Phys. Lett. 99 142103
3. Sofikiti N, Chaniotakis N, Grandal J, Utrera M, Sánchez- García M A and Calleja E 2010 GaN and InN nanocolumns as electrochemical sensing elements: potentiometric response to KCl, pH and urea Mater. Lett. 64 13325
4. Lai Y-T, Ganguly A, Chen L-C and Chen K-H 2010 Direct voltammetric sensing of l-cysteine at pristine GaN nanowires electrode Biosens. Bioelectron. 26 168891
5. Teubert J, Becker P, Furtmayr F and Eickhoff M 2011 GaN nanodiscs embedded in nanowires as optochemical transducers Nanotechnology 22 275505
6. Iwaki Y, Ono M, Yamaguchi K, Kusakabe K, Fujii K and Ohkawa K 2008 Nitride photocatalyst to generate hydrogen gas from water Phys. Status Solidi c 5 234951
7. Jung H S, Hong Y J, Li Y, Cho J, Kim Y-J and Yi G-C 2008 Photocatalysis using GaN nanowires ACS Nano 2 63742
8. Shen X, Small Y A, Wang J, Allen P B, Fernandez-Serra M V, Hybertsen M S and Muckerman J T 2010 Photocatalytic water oxidation at the GaN ()water interface J. Phys. Chem. C 114 13695704
9. Wang D, Pierre A, Kibria M G, Cui K, Han X, Bevan K H, Guo H, Paradis S, Hakima A-R and Mi Z 2011 Wafer-level photocatalytic water splitting on GaN nanowire arrays grown by molecular beam epitaxy Nano Lett. 11 23537
10. Richter T, Lüth H, Meijers R, Calarco R and Marso M 2008 Doping concentration of GaN nanowires determined by opto-electrical measurements Nano Lett. 8 30569
11. Furtmayr F, Vielemeyer M, Stutzmann M, Arbiol J, Estradé S, Peirò F, Morante J R and Eickhoff M 2008 Nucleation and growth of GaN nanorods on Si(111) surfaces by plasma-assisted molecular beam epitaxythe influence of Si- and Mg-doping J. Appl. Phys. 104 034309
12. Furtmayr F, Vielemeyer M, Stutzmann M, Laufer A, Meyer B K and Eickhoff M 2008 Optical properties of Si- and Mg-doped gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy J. Appl. Phys. 104 074309
13. Jeganathan K, Debnath R K, Meijers R, Stoica T, Calarco R, Grützmacher D and Lüth H 2009 Raman scattering of phononplasmon coupled modes in self-assembled GaN nanowires J. Appl. Phys. 105 123707
14. Arbiol J et al 2009 Triple-twin domains in Mg doped GaN wurtzite nanowires: structural and electronic properties of this zinc-blende-like stacking Nanotechnology 20 145704
15. Calleja E, Sánchez-García M A, Sánchez F J, Calle F, Naranjo F B, Muoz E, Molina S I, Sánchez A M, Pacheco F J and García R 1999 Growth of III-nitrides on Si(111) by molecular beam epitaxy doping, optical, and electrical properties J. Cryst. Growth 201/202 296317
16. Hsu C S and Mansfeld F 2001 Concerning the conversion of the constant phase element parameter Yo into a capacitance Corrosion 57 747
17. Calarco R, Marso M, Richter T, Aykanat A I, Meijers R, Hart A v d, Stoica T and Lüth H 2005 Size-dependent photoconductivity in MBE-grown GaN-nanowires Nano Lett. 5 9814
18. Pfüller C, Brandt O, Grosse F, Flissikowski T, Chèze C, Consonni V, Geelhaar L, Grahn H T and Riechert H 2010 Unpinning the Fermi level of GaN nanowires by ultraviolet radiation Phys. Rev. B 82 045320