Tailoring electronic structures of carbon nanotubes by solvent with electron-donating and -withdrawing groups

Journal of the American Chemical Society

Volumn 130, Issue 6, 2008, Pages 2062-2066

  Shin, Hyeon Jin ^a   Soo, Min Kim ^b   Yoon, Seon Mi ^a   Benayad, Anass ^a   Ki, Kang Kim ^b   Sung, Jin Kim ^b   Hyun, Ki Park ^b   Choi, Jae Young ^a   Young, Hee Lee ^b  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^b Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC STRUCTURE; ENERGY BARRIERS; SEMICONDUCTOR MATERIALS; SHEET RESISTANCE;

ALIPHATIC BACKBONE; DONATING GROUP; SCHOTTKY BARRIER HEIGHT;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

ANILINE; BENZENE; BUTYLAMINE; HEXANE; NITROBENZENE; NITROMETHANE; SINGLE WALLED NANOTUBE; SOLVENT;

ARTICLE; CHEMICAL STRUCTURE; CORRELATION ANALYSIS; ELECTRON TRANSPORT; REACTION ANALYSIS; SEMICONDUCTOR; STRUCTURE ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMISTRY, PHYSICAL; ELECTRONS; NANOTUBES, CARBON; SOLVENTS; SPECTROPHOTOMETRY; X-RAYS;

EID: 39049171283     PISSN: 00027863     EISSN: None     Source Type: Journal    
DOI: 10.1021/ja710036e     Document Type: Article

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