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Volumn 258, Issue 14, 2012, Pages 5482-5485

Electromagnetic energy absorption potential and microwave heating capacity of SiC thin films in the 1-16 GHz frequency range

(6) Aissa B a,d Tabet, N b Nedil, M c Therriault, D d Rosei, F e Nechache, R e,f

a MPB COMMUNICATIONS INC (Canada)

b KING FAHD UNIVERSITY OF PETROLEUM AND MINERALS (Saudi Arabia)

c UNIVERSITÉ DU QUÉBEC EN ABITIBI TÉMISCAMINGUE (Canada)

d DEPARTMENT OF CHEMICAL ENGINEERING (Canada)

e INSTITUT NATIONAL DE LA RECHERCHE SCIENTIFIQUE (Canada)

f UNIVERSITY OF ROME TOR VERGATA (Italy)

Author keywords

EM absorption; Microwave heating; PECVD; Silicon carbide materials

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SILICON; ELECTROMAGNETIC WAVES; FREQUENCY DOMAIN ANALYSIS; MICROWAVE HEATING; MICROWAVES; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON CARBIDE;

A-SIC:H THIN FILMS; ABSORPTION POTENTIAL; EM ABSORPTIONS; GHZ FREQUENCIES; HYDROGENATED SILICON CARBIDE; MICROWAVE HEATING APPLICATIONS; SILICON CARBIDE MATERIALS; UNDOPED SILICON;

THIN FILMS;

EID: 84858341301 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2012.02.047 Document Type: Article

Times cited : (27)

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