Fabrication of amorphous silicon carbide films using VHF-PECVD for triple-junction thin-film solar cell applications

Solar Energy Materials and Solar Cells

Volumn 93, Issue 6-7, 2009, Pages 1056-1061

  Yunaz, Ihsanul Afdi ^a   Hashizume, Kenji ^a   Miyajima, Shinsuke ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Amorphous silicon carbide; Light stability; Monomethyl silane; Solar cell; VHF PECVD

Indexed keywords

A-SIC:H; AMORPHOUS SILICON CARBIDES; CARBON SOURCES; DEPOSITION CONDITIONS; FILM PROPERTIES; HIGH FREQUENCIES; HYDROGEN DILUTION RATIOS; HYDROGENATED AMORPHOUS SILICON CARBIDES; INTRINSIC LAYERS; LIGHT STABILITY; LOW DEFECT DENSITIES; MONOMETHYL SILANE; OPEN-CIRCUIT VOLTAGES; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITIONS; SINGLE-JUNCTION CELLS; THIN-FILM SOLAR CELLS; TRIPLE JUNCTIONS; TRIPLE-JUNCTION SOLAR CELLS; VHF-PECVD; WIDE GAPS;

AMORPHOUS FILMS; AMORPHOUS SILICON; CARBON FILMS; DEFECT DENSITY; FILM PREPARATION; HYDROGEN; PHOTOVOLTAIC CELLS; PLASMA DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILANES; SILICON CARBIDE; SOLAR CELLS;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 67349239762     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2008.11.048     Document Type: Article

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