A new edge termination technique for SiC power devices

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1861-1866

  Hu, Shuntao ^a   Sheng, Kuang ^a  

^a RUTGERS UNIVERSITY   (United States)

Author keywords

Edge termination; Field plate; Oxide reliability; Power device; Power semiconductor; SiC

Indexed keywords

COMPUTER SIMULATION; DIELECTRIC MATERIALS; ELECTRIC FIELD EFFECTS; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DOPING; SILICA; SILICON CARBIDE;

FIELD PLATE; OXIDE RELIABILITY; POWER DEVICE; POWER SEMICONDUCTOR;

SEMICONDUCTOR DEVICES;

EID: 3142750772     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.027     Document Type: Conference Paper

References (14)

1. Goud C.B., Bhat K.N. Two-dimensional analysis and design considerations of high-voltage planar junctions equipped with field plate and guard ring. IEEE Trans. Electron Dev. 38(6):1991;1497-1504.
2. Urushidani T., Hashimoto K., Seki Y. The guard-ring termination for the high-voltage SiC Schottky barrier diodes. IEEE Electron Dev. Lett. 16(7):1995;331-332.
3. Sheridan DC, Niu G, Merrett JN, Cressler JD, Dufrene JB, Casady JB, et al. Comparison and optimization of edge termination techniques for SiC power devices. In: Proceedings of the 13th International Symposium on Power Semiconductor Devices and ICs, ISPSD '01, 4-7 June 2001, p. 191-4.
4. Bhatnagar M, Nakanishi H, Bothra S, McLarty PK, Baliga BJ. Edge terminations for SiC high voltage Schottky rectifiers. in: Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs, ISPSD '93, 18-20 May 1993. p. 89-94.
5. Mihaila A, Udrea F, Godignon P, Trajkovic T, Brezeanu G, Rusu A, et al. Buried field rings-a novel edge termination method for 4H-SiC high voltage devices. In: Proceedings of the International Semiconductor Conference, CAS 2002, vol. 2, 8-12 October 2002. p. 245-8.
6. Biserica O, et al. Design of a reliable planar edge termination for SiC power devices. In: Proceedings of the International Semiconductor Conference, CAS 2001, vol. 2, 9-13 October 2001. p. 353-6.
7. Li X., et al. Multistep junction termination extension for SiC power devices. Electron. Lett. 37(6):2001;392-393.
8. Lipkin L.A., Palmour J.W. Insulator investigation on SiC for improved reliability. IEEE Trans. Electron Dev. 46(3):1999;525-532.
9. Aung MTH, Szmidt J, Bakowski M. The study of thermal oxidation of SiC surface. In: 3rd International Conference on Novel Applications of Wide Bandgap Layers, 2001. Abstract Book, 26-30 June 2001. p. 167-8.
10. Cooper Jr JA. Oxides on SiC. In: Proceedings of the 1997 IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits, 4-6 August 1997. p. 236-43.
11. Mathur M.M., Cooper J.A. Jr. Time-dependent-dielectric-breakdown measurements of thermal oxides on n-type 6H-SiC. IEEE Trans. Electron Dev. 46(3):1999;520-524.
12. Tarplee M.C., Madangarli V.P., Zhang Q., Sudarshan T.S. Design rules for field plate edge termination in SiC Schottky diodes. IEEE Trans. Electron Dev. 48(12):2001;2659-2664.
13. Singh R, Palmour JW. Planar terminations in 4H-SiC Schottky diodes with low leakage and high yields. In: IEEE International Symposium on Power Semiconductor Devices and IC's, ISPSD '97, 26-29 May 1997. p. 157-60.
14. Dragomirescu D, Charitat G, Morancho F, Rossel P. Novel concepts for high voltage junction termination techniques using very deep trenches. In: Proceedings of the 1999 International Semiconductor Conference, CAS '99, vol. 1, 5-9 October 1999. p. 67-70.