Over 100 ns intrinsic radiative recombination lifetime in type II InAs/GaAs 1-xSb x quantum dots

Journal of Applied Physics

Volumn 111, Issue 4, 2012, Pages

  Nishikawa, Kazutaka ^a   Takeda, Yasuhiko ^a   Yamanaka, Ken Ichi ^a   Motohiro, Tomoyoshi ^a   Sato, Daisuke ^b   Ota, Junya ^b   Miyashita, Naoya ^c   Okada, Yoshitaka ^c  

^a Rd Management Section   (Japan)

^b TOYOTA MOTOR CORPORATION   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DECAY CURVES; EFFECTIVE MASS APPROXIMATION; EXCITATION INTENSITY; GAAS; INAS QUANTUM DOTS; INAS/GAAS; NONRADIATIVE PROCESS; PHOTOLUMINESCENCE DECAY TIME; RADIATIVE RECOMBINATION; RATE EQUATIONS; TIME-CORRELATED SINGLE PHOTON COUNTING; TIME-RESOLVED PL MEASUREMENT; TYPE II;

CARRIER CONCENTRATION; INDIUM ARSENIDE;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84857828544     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3688864     Document Type: Article

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